M30800SAGP#D5 Renesas Electronics America, M30800SAGP#D5 Datasheet - Page 54

IC M16C MPU ROMLESS 100LQFP

M30800SAGP#D5

Manufacturer Part Number
M30800SAGP#D5
Description
IC M16C MPU ROMLESS 100LQFP
Manufacturer
Renesas Electronics America
Series
M16C™ M32C/80r
Datasheet

Specifications of M30800SAGP#D5

Core Processor
M16C/80
Core Size
16-Bit
Speed
20MHz
Connectivity
I²C, IEBus, SIO, UART/USART
Peripherals
DMA, WDT
Number Of I /o
45
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 85°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-

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R
R
M
e
E
3
. v
J
Figure 5.6 V
2
0
1
C
3
1 .
B
8 /
Memory Expansion Mode and Microprocessor Mode
(when accessing an external memory space)
RD
BCLK
CSi
ADi
BHE
DB
BCLK
CSi
WR,WRL,
WRH
DBi
0
ADi
BHE
0
[Read Timing]
[Write Timing]
0
0
3
N
G
8
o
NOTE:
NOTES:
0 -
o r
. v
3. Varies with operation frequency.
1
u
1. Values guaranteed only when the microcomputer is used independently.
2. Varies with operation frequency.
0
1
p
t
(if external bus cycle is a + b , m=b)
t
t
t
t
(if external bus cycle is a + b , n=(bx2)-1)
, 1
d(DB-WR)
h(WR-DB)
h(WR-AD)
h(WR-CS)
w(WR)
0
CC1
A maximum of 35ns is guaranteed for t
t
t
t
ac1(RD-DB)
ac1(AD-DB)
d(BCLK-AD)
2
0
=(tcyc/2 x n-15)ns.min
0
=V
5
t
t
t
18ns.max
18ns.max
t
=(tcyc x m-20)ns.min
=(tcyc/2-20)ns.min
=(tcyc/2-10)ns.min
=(tcyc/2-10)ns.min
18ns.max
d(BCLK-CS)
18ns.max
d(BCLK-AD)
18ns.max
d(BCLK-CS)
d(BCLK-RD)
CC2
Page 52
(1 + 1 Bus Cycles)
(1 + 1 Bus Cycles)
=(tcyc/2 x m-35)ns.max (if external bus cycle is a + b , m=(b x 2) + 1)
=(tcyc x n-35)ns.max (if external bus cycle is a + b , n = a + b)
tcyc
=3.3V Timing Diagram (1)
tcyc
(1)
(1)
t
d(BCLK-WR)
18ns.max
f o
Hi-Z
5
t
t
ac1(AD-DB)
d(DB-WR)
6
t
ac1(RD-DB)
t
(3)
w(WR)
(2)
t
su(DB-BCLK)
d(BCLK-AD)
30ns.min
(2)
(3)
Measurement Conditions
tcyc=
(1)
t
t
h(WR-DB)
+t
t
t
h(BCLK-WR)
h(WR-CS)
h(WR-AD)
0ns.min
• V
• Input high and low voltage: V
• Output high and low voltage: V
su(DB-BCLK)
CC
f
(BCLK)
1
10
=V
(3)
9
(3)
(3)
CC
t
h(BCLK-AD)
.
2
t
=3.0 to 3.6V
t
h(BCLK-RD)
t
t
h(BCLK-CS)
-3ns.min
h(BCLK-CS)
0ns.min
0ns.min
h(BCLK-AD)
0ns.min
0ns.min
t
t
t
0ns.min
h(RD-AD)
h(RD-DB)
h(RD-CS)
0ns.min
0ns.min
IH
Vcc
=1.5V, V
OH
=1.5V, V
5. Electrical Characteristics
1
=Vcc
IL
=0.5V
OL
2
=1.5V
=3.3V

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