M30833FJGP#D5 Renesas Electronics America, M30833FJGP#D5 Datasheet - Page 75

IC M32C MCU FLASH 512K 100LQFP

M30833FJGP#D5

Manufacturer Part Number
M30833FJGP#D5
Description
IC M32C MCU FLASH 512K 100LQFP
Manufacturer
Renesas Electronics America
Series
M16C™ M32C/80r
Datasheet

Specifications of M30833FJGP#D5

Core Processor
M32C/80
Core Size
16/32-Bit
Speed
32MHz
Connectivity
CAN, I²C, IEBus, SIO, UART/USART
Peripherals
DMA, WDT
Number Of I /o
85
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
31K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 26x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 85°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

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Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
M30833FJGP#D5M30833FJGP D5
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
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Part Number:
M30833FJGP#D5M30833FJGP#U3
Manufacturer:
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Quantity:
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Manufacturer:
Renesas Electronics America
Quantity:
10 000
Company:
Part Number:
M30833FJGP#D5M30833FJGP#U5
Manufacturer:
Renesas Electronics America
Quantity:
10 000
R
R
M
e
E
3
. v
J
Figure 5.10 V
2
0
C
1
3
4 .
B
8 /
0
1
3
0
1
J
G
Memory Expansion Mode and Microprocessor Mode (with no wait state)
3
a
BCLK
ALE
CSi
ADi
BHE
CSi
ADi
BHE
WR,WRL,
WRH
DBi
RD
DB
BCLK
ALE
0 -
o r
n
Read Timing
Write Timing
3 .
1
u
, 1
4
p
NOTES:
NOTES:
1
(
2
1. Varies with operation frequency.
M
1. Values guaranteed only when the microcomputer is used independently.
2. Varies with operation frequency:
CC
0
t
t
t
t
t
0
d(DB-WR)
h(WR-DB)
h(WR-AD)
h(WR-CS)
w(WR)
3
A maximum of 35ns is guaranteed for t
=3.3V Timing Diagram (1)
t
t
6
2
ac2(RD-DB)
ac2(AD-DB)
t
t
18ns.max
C
18ns.max
d(BCLK-AD)
d(BCLK-ALE)
t
t
=(tcyc/2-15)ns.min
8 /
d(BCLK-ALE)
Page 73
ac2(RD-DB)
t
ac2(AD-DB)
, 3
=(tcyc-20)ns.min
=(tcyc/2-10)ns.min
=(tcyc/2-10)ns.min
=(tcyc/2-10)ns.min
t
t
t
18ns.max
18ns.max
18ns.max
t
d(BCLK-CS)
18ns.max
18ns.max
d(BCLK-AD)
d(BCLK-CS)
d(BCLK-RD)
t
=(tcyc/2-35)ns.max
=(tcyc-35)ns.max
M
Hi-Z
su(DB-BCLK)
30ns.min
3
tcyc
2
tcyc
(2)
C
f o
(1)
(1)
(2)
t
8 /
h(BCLK-ALE)
(1)
9
3
1
t
) T
-2ns.min
t
d(BCLK-WR)
-2ns.min
18ns.max
h(BCLK-ALE)
t
d(DB-WR)
t
h(BCLK-AD)
t
t
0ns.min
h(BCLK-CS)
h(BCLK-RD)
-3ns.min
0ns.min
0ns.min
t
t
t
t
d(BCLK-AD)
0ns.min
w(WR)
(1)
h(RD-CS)
0ns.min
h(RD-DB)
h(RD-AD)
Measurement Conditions:
(1)
• V
• Input high and low voltage: V
• Output high and low voltage: V
+t
CC
t
su(DB-BCLK)
=3.0 to 3.6V
h(BCLK-WR)
t
t
h(WR-DB)
h(WR-CS)
t
0ns.min
h(WR-AD)
(1)
(1)
.
(1)
t
t
h(BCLK-CS)
h(BCLK-AD)
0ns.min
0ns.min
IH
=1.5V, V
OH
=1.5V, V
IL
=0.5V
OL
Vcc=3.3V
=1.5V

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