M30620FCPGP#D7C Renesas Electronics America, M30620FCPGP#D7C Datasheet - Page 68
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M30620FCPGP#D7C
Manufacturer Part Number
M30620FCPGP#D7C
Description
MCU 3/5V 128K I-TEMP 100-LQFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/60r
Datasheet
1.QSK-62P_PLUS.pdf
(103 pages)
Specifications of M30620FCPGP#D7C
Core Processor
M16C/60
Core Size
16-Bit
Speed
24MHz
Connectivity
I²C, IEBus, UART/USART
Peripherals
DMA, WDT
Number Of I /o
85
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
10K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 26x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
M16C/62P Group (M16C/62P, M16C/62PT)
Rev.2.41
REJ03B0001-0241
Table 5.31
NOTES:
I
I
I
Symbol
CC
det4
det3
1. Referenced to V
2. With one timer operated using fC32.
3. This indicates the memory in which the program to be executed exists.
4. I
specified.
det
I
I
Jan 10, 2006
det4
det3
Power Supply Current
(V
Low Voltage Detection Dissipation Current
Reset Area Detection Dissipation Current
is dissipation current when the following bit is set to “1” (detection circuit enabled).
CC1
: VC27 bit in the VCR2 register
: VC26 bit in the VCR2 register
=V
Electrical Characteristics (2)
CC2
=2.7V to 3.6V)
CC1
=V
Parameter
Page 66 of 96
CC2
=2.7 to 3.3V, V
In single-chip
mode, the output
pins are open and
other pins are V
SS
= 0V at T
(4)
(4)
SS
(1)
Mask ROM
Flash
Memory
Flash Memory
Program
Flash Memory
Erase
Mask ROM
Flash Memory
Mask ROM
Flash Memory
opr
= − 20 to 85 ° C / − 40 to 85 ° C, f(BCLK)=10MHz unless otherwise
Measuring Condition
f(BCLK)=10MHz
No division
No division,
On-chip oscillation
f(BCLK)=10MHz,
No division
No division,
On-chip oscillation
f(BCLK)=10MHz,
VCC1=3.0V
f(BCLK)=10MHz,
VCC1=3.0V
f(XCIN)=32kHz
Low power dissipation
mode, ROM
f(BCLK)=32kHz
Low power dissipation
mode, RAM
f(BCLK)=32kHz
Low power dissipation
mode, Flash Memory
On-chip oscillation,
Wait mode
f(BCLK)=32kHz
Wait mode
Oscillation capability High
f(BCLK)=32kHz
Wait mode
Oscillation capability Low
Stop mode
Topr =25 ° C
(2)
(2)
(3)
(3)
,
,
(3)
5. Electrical Characteristics
Min.
Standard
Typ.
420
1.8
6.0
1.8
0.7
0.6
0.4
12
22
25
25
45
8
1
8
Max.
3.0
11
13
4
2
Unit
mA
mA
mA
mA
mA
mA
µ A
µ A
µ A
µ A
µ A
µ A
µ A
µ A
µ A