M30800SAGP#D3 Renesas Electronics America, M30800SAGP#D3 Datasheet - Page 43

• Manufacturer Part Number: M30800SAGP#D3
• Description: MCU 3/5V 0K I-TEMP 100-LQFP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M32C/80r

Specifications of M30800SAGP#D3

• Core Processor: M16C/80
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, IEBus, SIO, UART/USART
• Peripherals: DMA, WDT
• Number Of I /o: 45
• Program Memory Type: ROMless
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -

R
R
M
e
E
3
. v
J
Figure 5.2 V
2
0
1
C
3
1 .
B
8 /
0
0
0
0
Memory Expansion Mode and Microprocessor Mode
(when accessing an external memory space)
3
N
CSi
ADi
BHE
CSi
DBi
BCLK
RD
NOTES:
ADi
BHE
WR,WRL,
WRH
DB
BCLK
G
[ Read Timing ]
8
[ Write timing ]
o
0 -
o r
. v
NOTE:
1
u
A maximum of 35ns is guaranteed for t
1. Values guaranteed only when the microcomputer is used independently.
2. Varies with operation frequency:
0
1
p
3. Varies with operation frequency:
, 1
0
CC1
t
(if external bus cycle is a +b , m=b)
t
t
t
t
(if external bus cycle is a +b , n=(bx2)-1)
2
d(DB-WR)
h(WR-DB)
h(WR-AD)
h(WR-CS)
w(WR)
t
t
ac1(RD-DB)
ac1(AD-DB)
0
t
0
=V
d(BCLK-AD)
5
=(tcyc/2 x n-15)ns.min
CC2
Page 41
=(tcyc x m-20)ns.min
=(tcyc/2-10)ns.min
=(tcyc/2-10)ns.min
=(tcyc/2-10)ns.min
t
t
t
18ns.max
18ns.max
18ns.max
18ns.max
t
18ns.max
d(BCLK-AD)
d(BCLK-CS)
d(BCLK-CS)
d(BCLK-RD)
=(tcyc/2 x m-35)ns.max (if external bus cycle is a + b , m=(b x 2)+1)
=(tcyc x n-35)ns.max (if external bus cycle is a + b , n=a+b)
=5V Timing Diagram (1)
tcyc
(1 +1 Bus Cycle)
tcyc
(1 +1 Bus Cycle)
(1)
(1)
f o
t
t
d(BCLK-WR)
18ns.max
5
ac1(AD-DB)
6
Hi-Z
t
d(DB-WR)
d(BCLK-AD)
(2)
t
ac1(RD-DB)
(3)
t
t
w(WR)
su(DB-BCLK)
26ns.min
+t
(3)
su(DB-BCLK)
(2)
Measurement Conditions:
(1)
tcyc=
t
t
h(WR-DB)
t
h(BCLK-WR)
• V
• Input high and low voltage: V
• Output high and low voltage: V
h(WR-CS)
t
-5ns.min
h(WR-AD)
CC1
f
(BCLK)
.
10
=V
9
(3)
CC2
(3)
(3)
t
h(BCLK-AD)
=4.2 to 5.5V
t
t
t
h(BCLK-CS)
-3ns.min
-3ns.min
t
h(BCLK-AD)
h(BCLK-CS)
-3ns.min
h(BCLK-RD)
-5ns.min
-3ns.min
0ns.min
t
t
t
h(RD-DB)
0ns.min
h(RD-CS)
0ns.min
h(RD-AD)
IH
=2.5V, V
OH
=2.0V, V
5. Electrical Characteristics
Vcc
IL
1
=0.8V
=Vcc
OL
=0.8V
2
=5V