BU7441G-TR Rohm Semiconductor, BU7441G-TR Datasheet - Page 33
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BU7441G-TR
Manufacturer Part Number
BU7441G-TR
Description
OP AMP I/O LV 1.7-5.5V 5-SSOP
Manufacturer
Rohm Semiconductor
Datasheet
1.BU7461G-TR.pdf
(37 pages)
Specifications of BU7441G-TR
Amplifier Type
General Purpose
Number Of Circuits
1
Slew Rate
0.3 V/µs
Gain Bandwidth Product
600kHz
Current - Input Bias
1pA
Voltage - Input Offset
1000µV
Current - Supply
50µA
Current - Output / Channel
10mA
Voltage - Supply, Single/dual (±)
1.7 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
5-SSOP
Number Of Channels
1
Common Mode Rejection Ratio (min)
45 dB
Input Offset Voltage
6 mV
Input Bias Current (max)
1 pA
Operating Supply Voltage
3 V, 5 V
Supply Current
0.12 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Maximum Dual Supply Voltage
+/- 2.75 V
Minimum Dual Supply Voltage
+/- 0.85 V
Mounting Style
SMD/SMT
Shutdown
No
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1.7 V
Technology
CMOS
Voltage Gain Db
95 dB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Output Type
-
-3db Bandwidth
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BU7441G-TR
Manufacturer:
Rohm
Quantity:
5 795
Part Number:
BU7441G-TR
Manufacturer:
ROHM/罗姆
Quantity:
20 000
BU7261/BU7261S family, BU7241/BU7241S family, BU7295/BU7295S family, BU7275/BU7275S family
BU7262/BU7262S family, BU7242/BU7242S family, BU7264/BU7264S family, BU7244/BU7244S family
●Derating curve
© 2010 ROHM Co., Ltd. All rights reserved.
www.rohm.com
Power dissipation (total loss) indicates the power that can be consumed by IC at Ta=25℃(normal temperature).IC is heated
when it consumed power, and the temperature of IC ship becomes higher than ambient temperature. The temperature that
can be accepted by IC chip depends on circuit configuration, manufacturing process, and consumable power is limited.
Power dissipation is determined by the temperature allowed in IC chip (maximum junction temperature) and thermal
resistance of package (heat dissipation capability). The maximum junction temperature is typically equal to the maximum
value in the storage temperature range. Heat generated by consumed power of IC radiates from the mold resin or lead frame
of the package. The parameter which indicates this heat dissipation capability (hardness of heat release) is called thermal
resistance, represented by the symbol θj-a[℃/W]. The temperature of IC inside the package can be estimated by this
thermal resistance. Fig.195 (a) shows the model of thermal resistance of the package. Thermal resistance θja, ambient
temperature Ta, junction temperature Tj, and power dissipation Pd can be calculated by the equation below :
Derating curve in Fig.195(b) indicates power that can be consumed by IC with reference to ambient temperature. Power that
can be consumed by IC with reference to ambient temperature. Power that can be consumed by IC begins to attenuate at
certain ambient temperature. This gradient is determined by thermal resistance θja. Thermal resistance θja depends on chip
size, power consumption, package, ambient temperature, package condition, wind velocity, etc even when the same of
package is used. Thermal reduction curve indicates a reference value measured at a specified condition. Fig196(c) ~ (h)
show a derating curve for an example of low voltage full swing
CMOS Op-Amp.
When using the unit above Ta=25[℃], subtract the value above per degree[℃]. Permissible dissipation is the value.
when FR4 glass epoxy board 70[mm]×70[mm]×1.6[mm] (cooper foil area below 3[%]) is mounted.
1000
1000
800
600
400
200
800
600
400
200
0
0
(*26)
5.4
0
0
(f) BU7261SG BU7241SG
(c) BU7261G BU7241G
BU7275SHFV BU7295SHFV
AMBIENT TEMPERATURE[ ℃ ]
AMBIENT TEMPERATURE[ ℃ ]
BU7275HFV BU7295HFV
Chip surface temperature Tj [℃]
Power dissin]
θja = ( Tj ー Ta ) / Pd [ ℃ /W]
(a)Thermal resistance
Ambient temperature Ta [℃]
50
50
チップ 表面温度 Tj [ ℃ ]
消費電力 P [W]
周囲温度 Ta [ ℃ ]
5 4 0 [m W ]
5 3 5 [m W ]
5 4 0 [ m W ]
(*27)
5 3 5 [ m W ]
6.2
85
θja = (Tj-Ta) / Pd
100
100
BU7261SG(*26)
BU7241SG(*26)
BU7295SHFV(*30)
BU7275SHFV(*30)
105
BU7261G(*26)
BU7241G(*26)
BU7295HFV(*30)
BU7275HFV(*30)
Fig. 195 Thermal resistance and derating
150
150
(*28)
4.8
(d) BU7262F/FVM/NUX BU7242F/FVM/NUX
(g) BU7262S F/FVM/NUX BU7242S F/FVM/NUX
1000
1000
800
600
400
200
800
600
400
200
0
0
Fig. 196 Derating Curve
0
0
[℃/W]
AMBIENT TEMPERATURE[ ℃ ]
AMBIENT TEMPERATURE[ ℃ ]
33/36
(*29)
4.12
50
50
・・・・・ (Ⅰ)
P2
P1
480[mW]
412[mW]
412[mW]
620[mW]
620[mW]
480[mW]
85
0
100
100
Pd(max)
BU7262F(*27)
BU7242F(*27)
BU7262FVM(*28)
BU7242FVM(*28)
BU7262NUX(*29)
BU7242NUX(*29)
BU7262SF(*27)
BU7242SF(*27)
BU7262SFVM(*28)
BU7242SFVM(*28)
BU7262SNUX(*29)
BU7242SNUX(*29)
105
25
[W]
Ta[ ℃ ]
(*30)
Ambient temperature Ta [℃]
5.35
(b) Derating curve
θja1
150
150
50
1000
1000
800
600
400
200
75
800
600
400
200
0
0
0
0
θja2 <θja1
(h) BU7264SF BU7244SF
(e) BU7264F BU7244F
100
(*31)
4.88
θja2
AMBIENT TEMPERATURE[ ℃ ]
AM BIENT TEMPERATURE[ ℃ ]
125
50
50
Tj(max)
4 88 [ mW ]
Technical Note
4 88 [ mW ]
2010.12 - Rev.A
85
[mW/℃]
100
100
Unit
BU7264F(*31)
BU7244F(*31)
BU7264SF(*31)
BU7244SF(*31)
105
150
150