TL084CN STMicroelectronics, TL084CN Datasheet - Page 6
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TL084CN
Manufacturer Part Number
TL084CN
Description
IC AMP J-FET QUAD OP 14 DIP
Manufacturer
STMicroelectronics
Specifications of TL084CN
Amplifier Type
J-FET
Number Of Circuits
4
Slew Rate
16 V/µs
Gain Bandwidth Product
4MHz
Current - Input Bias
20pA
Voltage - Input Offset
3000µV
Current - Supply
1.4mA
Current - Output / Channel
40mA
Voltage - Supply, Single/dual (±)
6 V ~ 36 V, ±3 V ~ 18 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Through Hole
Package / Case
14-DIP (0.300", 7.62mm)
Number Of Channels
4
Common Mode Rejection Ratio (min)
70 dB
Input Offset Voltage
10 mV
Input Bias Current (max)
200 pA
Supply Current
2.5 mA
Maximum Power Dissipation
680 mW
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Dual Supply Voltage
+/- 5 V, +/- 9 V, +/- 12 V, +/- 15 V
Maximum Dual Supply Voltage
+/- 18 V
Minimum Dual Supply Voltage
+/- 3 V
Mounting Style
Through Hole
Shutdown
No
Technology
BiFET
Voltage Gain Db
106.02 dB
Bandwidth
4 MHz
Channel Separation
120
Common Mode Rejection Ratio
86
Current, Input Bias
30 pA
Current, Input Offset
5 pA
Current, Output
20 mA
Current, Supply
1.4 mA
Harmonic Distortion
0.01 %
Number Of Amplifiers
Quad
Package Type
DIP-14
Power Dissipation
680 mW
Resistance, Input
10^12 Ohms
Signal Gain
200 V/mV
Temperature, Operating, Range
0 to +70 °C
Time, Rise
0.1 μs
Voltage, Input
±15 V
Voltage, Noise
15 nV/sqrt Hz
Voltage, Offset
3 mV
Voltage, Supply
6 to 36 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Output Type
-
-3db Bandwidth
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2218-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TL084CN
Manufacturer:
STM
Quantity:
20 000
Part Number:
TL084CN
Manufacturer:
TI
Quantity:
20 000
Company:
Part Number:
TL084CN.
Manufacturer:
BELFUSE
Quantity:
3 000
Electrical characteristics
Table 3.
1. The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction
6/18
Symbol
V
temperature.
GBP
THD
o1
∅m
K
e
R
t
/V
ov
r
n
i
o2
Rise time
V
Overshoot
V
Gain bandwidth product
V
Input resistance
Total harmonic distortion
Equivalent input noise voltage
R
Phase margin
Channel separation
A
F= 1kHz, R
V
V
in
in
in
v
S
o
= 100
CC
= 100Ω, F= 1kHz
= 20mV, R
= 20mV, R
= 10mV, R
= 2V
= ±15V, T
pp
)
L
= 2kΩ ,C
L
L
L
= 2kΩ , C
= 2kΩ , C
= 2kΩ , C
amb
Parameter
L
= +25°C (unless otherwise specified) (continued)
= 100pF, A
L
L
L
= 100pF, unity gain
= 100pF, unity gain
= 100pF, F= 100kHz
v
= 20dB,
TL084I,AC,AI, BC,BI
Min.
2.5
Typ.
10
0.01
120
0.1
10
15
45
4
12
Max.
Min.
2.5
TL084C
Typ.
10
0.01
120
0.1
10
15
45
4
12
Max.
degrees
TL084
MHz
Unit
----------- -
dB
nV
μs
%
%
Ω
Hz