AD8275BRMZ Analog Devices Inc, AD8275BRMZ Datasheet - Page 4

• Manufacturer Part Number: AD8275BRMZ
• Description: IC AMP DIFF R-R LDRIFT 8MSOP
• Manufacturer: Analog Devices Inc

Specifications of AD8275BRMZ

• Amplifier Type: Differential
• Number Of Circuits: 1
• Output Type: Rail-to-Rail
• Slew Rate: 25 V/µs
• -3db Bandwidth: 15MHz
• Voltage - Input Offset: 150µV
• Current - Supply: 1.9mA
• Current - Output / Channel: 30mA
• Voltage - Supply, Single/dual (±): 3.3 V ~ 15 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
• No. Of Amplifiers: 1
• Input Offset Voltage: 500µV
• Bandwidth: 15MHz
• Supply Voltage Range: 3.3V To 15V
• Supply Current: 1.9mA
• Amplifier Case Style: MSOP
• No. Of Pins: 8
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain Bandwidth Product: -
• Current - Input Bias: -

AD8275
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Supply Voltage
Output Short-Circuit Current
Voltage at +IN, −IN Pins
Voltage at REFx, +V
Current into REFx, +IN, −IN, SENSE,
Storage Temperature Range
Specified Temperature Range
Thermal Resistance (θ
Package Glass Transition Temperature
ESD Human Body Model
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the AD8275 package is
limited by the associated rise in junction temperature (T
the die. The plastic encapsulating the die locally reaches the
junction temperature. At approximately 140°C, which is the
glass transition temperature, the plastic changes its properties.
Even temporarily exceeding this temperature limit can change
the stresses that the package exerts on the die, permanently
shifting the parametric performance of the AD8275. Exceeding
a junction temperature of 140°C for an extended period can
result in changes in silicon devices, potentially causing failure.
The still air thermal properties of the package and PCB (θ
the ambient temperature (T
the package (P
The junction temperature is calculated as follows:
The power dissipated in the package (P
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the voltage between the supply pins (V
quiescent current (I
and OUT Pins
and OUT Pins
(T
G
T
)
J
= T
A
+ (P
D
) determine the junction temperature of the die.
D
× θ
S
, − V
S
). Assuming the load (R
JA
JA
)
)
S
, SENSE,
A
), and the total power dissipated in
D
) is the sum of the
Rating
18 V
See derating curve
(Figure 3)
−V
−V
3 mA
−65°C to +130°C
−40°C to +85°C
135°C/W
140°C
2 kV
S
S
L
+ 40 V, +V
− 0.5 V, +V
) is referenced to
S
) times the
S
S
− 40 V
J
+ 0.5 V
) on
JA
),
Rev. A | Page 4 of 16
midsupply, the total drive power is V
dissipated in the package and some of which is dissipated in the
load (V
The difference between the total drive power and the load
power is the drive power dissipated in the package.
In single-supply operation with R
case is V
Airflow increases heat dissipation, effectively reducing θ
addition, more metal directly in contact with the package leads
from metal traces, through holes, ground, and power planes
reduces θ
Figure 3 shows the maximum safe power dissipation in the
package vs. the ambient temperature on a 4-layer JEDEC
standard board.
ESD CAUTION
P
P
Figure 3. Maximum Power Dissipation vs. Ambient Temperature
D
D
OUT
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
= Quiescent Power + (Total Drive Power − Load Power)
=
OUT
JA
0
–40
(
.
× I
V
= V
S
OUT
×
–20
I
S
/2.
).
S
)
+




0
V
AMBIENT TEMPERATURE (°C)
2
S
×
20
V
R
OUT
L
L




40
referenced to –V
–
S
/2 × I
V
OUT
R
60
L
2
OUT
80
, some of which is
100
S
, the worst
JA
120
. In