HFA1113IBZ Intersil, HFA1113IBZ Datasheet - Page 16

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HFA1113IBZ

Manufacturer Part Number
HFA1113IBZ
Description
IC BUFFER 850MHZ 8-SOIC
Manufacturer
Intersil
Datasheet

Specifications of HFA1113IBZ

Amplifier Type
Buffer
Number Of Circuits
1
Slew Rate
2400 V/µs
-3db Bandwidth
850MHz
Current - Input Bias
25µA
Voltage - Input Offset
8000µV
Current - Supply
21mA
Current - Output / Channel
60mA
Voltage - Supply, Single/dual (±)
9 V ~ 11 V, ±4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Rohs Compliant
YES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Output Type
-
Gain Bandwidth Product
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HFA1113IBZ
Manufacturer:
HARRIS
Quantity:
20 000
Die Characteristics
DIE DIMENSIONS:
METALLIZATION:
Metallization Mask Layout
HFA1113
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
NC
V
V-
63 mils x 44 mils x 19 mils
1600µm x 1130µm x 483µm
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8k
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16k
L
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
OUT
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
NC
For information regarding Intersil Corporation and its products, see www.intersil.com
Å
Å
±0.4k
16
±0.8k
Å
Å
+IN
-IN
V
V+
H
HFA1113
PASSIVATION:
TRANSISTOR COUNT:
SUBSTRATE POTENTIAL (POWERED UP):
Type: Nitride
Thickness: 4k
52
Floating (Recommend Connection to V-)
Å
±0.5k
Å
July 11, 2005
FN1342.6

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