HA1-5330-5 Intersil, HA1-5330-5 Datasheet - Page 5

• Manufacturer Part Number: HA1-5330-5
• Description: IC AMP SAMPLE&HOLD 650NS 14-DIP
• Manufacturer: Intersil

Specifications of HA1-5330-5

• Amplifier Type: Sample and Hold
• Number Of Circuits: 1
• Slew Rate: 90 V/µs
• Gain Bandwidth Product: 4.5MHz
• Current - Input Bias: 20nA
• Voltage - Input Offset: 200µV
• Current - Supply: 19mA
• Current - Output / Channel: 10mA
• Voltage - Supply, Single/dual (±): ±10 V ~ 20 V
• Operating Temperature: 0°C ~ 75°C
• Mounting Type: Through Hole
• Package / Case: 14-CDIP (0.300", 7.62mm)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Output Type: -
• -3db Bandwidth: -

Die Characteristics
DIE DIMENSIONS:
METALLIZATION:
Metallization Mask Layout
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
99 mils x 166 mils x 19 mils
2510µm x 4210µm x 483µm
Type: Al, 1% Cu
Thickness: 16k
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Å
±2k
For information regarding Intersil Corporation and its products, see www.intersil.com
Å
OFFSET ADJ
OFFSET ADJ
5
OUTPUT
+IN
V-
HA-5330
HA-5330
PASSIVATION:
SUBSTRATE POTENTIAL (POWERED UP):
TRANSISTOR COUNT:
PROCESS:
Type: Nitride (Si
Silox Thickness: 12k
Nitride Thickness: 3.5k
Signal GND
205
Bipolar Dielectric Isolation
3
N
-IN
SIGNAL GND
SUPPLY GND
V+
S/H CONTROL
4
) over Silox (SiO
Å
Å
±2k
±1.5k
Å
Å
2
, 5% Phos.)