AD648JR Analog Devices Inc, AD648JR Datasheet - Page 9

• Manufacturer Part Number: AD648JR
• Description: IC OPAMP BIFET 1MHZ DUAL 8SOIC
• Manufacturer: Analog Devices Inc

Specifications of AD648JR

• Mounting Type: Surface Mount
• Rohs Status: RoHS non-compliant
• Amplifier Type: J-FET
• Number Of Circuits: 2
• Slew Rate: 1.8 V/µs
• Gain Bandwidth Product: 1MHz
• Current - Input Bias: 5pA
• Voltage - Input Offset: 750µV
• Current - Supply: 340µA
• Current - Output / Channel: 15mA
• Voltage - Supply, Single/dual (±): ±4.5 V ~ 18 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 8-SOIC (3.9mm Width)
• No. Of Amplifiers: 2
• Bandwidth: 1MHz
• No. Of Pins: 8
• Peak Reflow Compatible (260 C): No
• Input Bias Current: 20pA
• Input Offset Voltage Max: 2mV
• Common Mode Ratio: 76
• Output Type: -
• -3db Bandwidth: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

The AD648 in this configuration provides a 700 kHz small signal
bandwidth and 1.8 V/µs typical slew rate. The 33 pF capacitor
across the feedback resistor optimizes the circuit’s response. The
oscilloscope photos in Figures 26a and 26b show small and
large signal outputs of the circuit in Figure 24. Upper traces
show the input signal V
voltage with the DAC’s digital input set to all 1s. The circuit
settles to ± 0.01% for a 20 V input step in 14 µs.
REV. E
Figure 26b. Response to ± 100 mV p-p Reference Square
Wave
Figure 26a. Response to ± 20 V p-p Reference Square
Wave
IN
TEMP
–25
0
+25
+50
+75
+85
C
. Lower traces are the resulting output
Figure 28. Photodiode Pre-Amp Errors Over Temperature
R
(M )
15,970
2,830
500
88.5
15.6
7.8
SH
V
( V)
150
225
300
375
450
480
OS
(1 + R
151 V
233 V
360 V
800 V
3.33 mV
6.63 mV
F
/R
SH
–9–
) V
DUAL PHOTODIODE PREAMP
The performance of the dual photodiode preamp shown in
Figure 27 is enhanced by the AD648’s low input current, input
voltage offset, and offset voltage drift. Each photodiode sources
a current proportional to the incident light power on its surface.
R
to R
An error budget illustrating the importance of low amplifier
input current, voltage offset, and offset voltage drift to minimize
output voltage errors can be developed by considering the
equivalent circuit for the small (0.2 mm
shown in Figure 27. The input current results in an error pro-
portional to the feedback resistance used. The amplifier’s offset
will produce an error proportional to the preamp’s noise gain
(1+R
amplifier’s input current will double with every 10°C rise in
temperature, and the photodiode’s shunt resistance halves with
every 10°C rise. The error budget in Figure 28 assumes a room
temperature photodiode R
input current and input offset voltage specs of an AD648C.
The capacitance at the amplifier’s negative input (the sum of the
photodiode’s shunt capacitance, the op amp’s differential input
capacitance, stray capacitance due to wiring, etc.) will cause a
rise in the preamp’s noise gain over frequency. This can result in
excess noise over the bandwidth of interest. C
noise gain “peaking” at the expense of signal bandwidth.
OS
F
converts the photodiode current to an output voltage equal
F
F
× I
/R
I
(pA)
0.30
2.26
10.00
56.6
320
640
B
SH
S
.
), where R
Figure 27. A Dual Photodiode Pre-Amp
I
30 V
262 V
1.0 mV
5.6 mV
32 mV
64 mV
B
SH
R
F
is the photodiode shunt resistance. The
SH
of 500 MΩ, and the maximum
TOTAL
181 V
495 V
1.36 mV
6.40 mV
35.3 mV
70.6 mV
2
area) photodiode
F
reduces the
AD648