SA5232D/01,112 NXP Semiconductors, SA5232D/01,112 Datasheet - Page 5

IC OPAMP MATCHED DUAL LV 8-SOIC

SA5232D/01,112

Manufacturer Part Number
SA5232D/01,112
Description
IC OPAMP MATCHED DUAL LV 8-SOIC
Manufacturer
NXP Semiconductors
Datasheet

Specifications of SA5232D/01,112

Amplifier Type
General Purpose
Number Of Circuits
2
Output Type
Rail-to-Rail
Slew Rate
0.8 V/µs
-3db Bandwidth
2.5MHz
Current - Input Bias
90nA
Voltage - Input Offset
200µV
Current - Supply
1.4mA
Current - Output / Channel
12mA
Voltage - Supply, Single/dual (±)
2 V ~ 5.5 V, ±1 V ~ 2.75 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain Bandwidth Product
-
Other names
568-3571-5
935275253112
SA5232D/01
1. These parameters are measured for V
Philips Semiconductors
DC ELECTRICAL CHARACTERISTICS
V
NOTE:
2002 May 21
SYMBOL
CC
CMRR
Matched dual high-performance
low-voltage operational amplifier
PSRR
PSRR
V
V
I
V
for common mode ranges between the measured regions.
A
A
V
V
OS
I
I
OS
I
I
i(CM)
V
V
B
= 2 V to 5.5 V, V
VOL
OUT
CC
OS
OS
I
I
I
I
OS
OS
B
I
L
/ T
OS
OS
O
B
/ T
/ T
Supply current
Offset voltage
Offset voltage
Offset voltage drift with temperature
Offset voltage difference between any amplifiers in the
same package at the same common mode level
Offset current
Offset current
Offset current drift with temperature
Input bias current
Input bias current
Input bias current drift with temperature
Input bias current difference between any amplifier in the
same package at the same common mode level.
Common-mode input range
Common-mode rejection ratio, small signal
Common mode rejection ratio large signal
Common-mode rejection ratio, large signal
Power supply rejection ratio
Power supply rejection ratio
Peak load current sink and source
Peak load current, sink and source
Open loop voltage gain
Open-loop voltage gain
Output voltage swing
Out ut voltage swing
Output voltage swing for
V
CC
= 2.75 V, V
EE
= 0 V, T
g
g
EE
1
1
1
j
= –2.75 V
amb
g
PARAMETER
= 25 C; V
EE
,
< V
EE
CM
< V
y
g
< V
i(CM)
y
EE
+0.5 V and for V
< V
1
CC
; unless otherwise stated.
5
EE
V
V
V
V
V
V
EE
EE
EE
EE
EE
Over full temp. range
Over full temp. range
Over full temp. range
Over full temp. range
Over full temp. range
Over full temp. range
Over full temp. range
Over full temp. range
Over full temp. range
Over full temp. range
Over full temp. range
Over full temp. range
Over full temp. range
+1 V < V
TEST CONDITIONS
TEST CONDITIONS
over full temp. range
over full temp. range
EE
V
V
< V
< V
< V
EE
EE
+1 V < V
+1 V < V
+1V < V
I
I
PEAK
I
PEAK
PEAK
V
V
V
V
R
i(CM)
i(CM)
< V
< V
R
CC
OS
i(CM)
OS
CC
L
L
= 600
CM
i(CM)
i(CM)
= 2 k
= 5.5 V;
= 0.1 mA
= 10 mA
= 5.5V
= 5 mA;
< V
< V
6 mV;
< V
i(CM)
6 mV
i(CM)
i(CM)
< V
EE
EE
< V
< V
EE
CC
< V
< V
< V
+0.5V;
+0.5 V
+0.5 V
CC
CC
. By design these parameters are intermediate
CC
CC
CC
V
V
V
V
V
V
V
EE
EE
EE
EE
EE
EE
EE
–200
–250
MIN
80
70
65
55
80
75
10
90
–0.25
+0.25
+0.25
5
–0.1
+0.1
+0.2
+0.2
NE/SA/AU5232
AU5232
LIMITS
–150
TYP
0.03
–90
100
100
110
1.4
1.6
0.4
1.2
0.5
25
35
10
50
25
90
90
12
90
0.2
0.6
4
5
8
3
6
V
V
V
V
V
V
V
CC
CC
CC
CC
CC
CC
CC
MAX
120
2.0
2.4
75
30
70
20
50
+0.25
3
4
30
60
–0.25
–0.25
.3
+0.1
–0.1
–0.2
–0.2
4
5
Product data
nA/ C
nA/ C
UNIT
mA
mV
mV
V/ C
mV
mV
mA
mA
nA
nA
nA
nA
nA
nA
dB
dB
dB
dB
dB
V
V
V
V
V

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