BH25MA3WHFV-TR Rohm Semiconductor, BH25MA3WHFV-TR Datasheet - Page 7

• Manufacturer Part Number: BH25MA3WHFV-TR
• Description: IC REG LDO 300MA 2.5V SD 6HVS0F
• Manufacturer: Rohm Semiconductor
• Series: -r

Specifications of BH25MA3WHFV-TR

• Regulator Topology: Positive Fixed
• Voltage - Output: 2.5V
• Voltage - Input: Up to 5.5V
• Voltage - Dropout (typical): 0.6V @ 100mA
• Number Of Regulators: 1
• Current - Output: 300mA (Max)
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 6-HVSOF
• Number Of Outputs: 1
• Polarity: Positive
• Input Voltage Max: 5.5 V
• Output Voltage: 2.5 V
• Output Type: Fixed
• Output Current: 300 mA
• Line Regulation: 20 mV
• Load Regulation: 90 mV
• Voltage Regulation Accuracy: 1 %
• Maximum Power Dissipation: 0.68 W
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Featured Product: CMOS LDO Regulators
• Current - Limit (min): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Limit (min): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
BH □□FB1WG series, BH□□FB1WHFV series,
BH □□LB1WG series, BH□□LB1WHFV series, BH □□MA3WHFV series
Part number selection
Noise terminal (BH
The terminal is directly connected to inward normal voltage source. Because this has low current ability, load exceeding
100nA will cause some instability at the output. For such reasons, we urge you to use ceramic capacitors which have less
leak current. When choosing noise the current reduction capacitor, there is a trade-off between boot-up time and stability. A
bigger capacitor value will result in lesser oscillation but longer boot-up time for VOU T.
Regarding input pin of the IC
This monolithi c IC contains P + isolation and P substrat e layer s between adjacent
elements in order to keep them isolated. P/N junctions are formed at the intersection of
these P layers with the N layers of other elements to create a variety of parasitic elements.
For example, when a resistor and transistor are connected to pins as shown in Fig.37
The formation of parasitic elements as a result of the relationships of the potentials of
different pins is an inevitable result of the IC's architecture. The operation of parasitic
elements can cause interference with circuit operation as well as IC malfunction and
damage. For these reasons, it is necessary to use caution so that the IC is not used in a
way that will trigger the operation of parasitic elements, such as by the application of
voltage lower than the GND (P substrate) voltage to input pins.
The P/N junction functions as a parasitic diode when GND > (Pin A) for the resistor or
GND > (Pin B) for the transistor (NPN).
Similarly, when GND > (Pin B) for the transistor (NPN), the parasitic diode described
above combines with the N layer of other adjacent elements to operate as a parasitic
NPN transistor.
P
ROHM
part number
(Terminal A)
N
B H
P +
P-board
Resistor
N
Output
voltage
3
P
Parasitic element
MA3WHFV)
GND
0
Fig. 35: V
P +
N
OUT
Current capacity
MA3 : 300mA
FB1 : 150mA
LB1 : 150mA
F B 1
startup time vs. noise-filtering capacitor capacitance characteristics (Example)
0.01
100
0.1
10
1
100P
noise-filtering capacitor capacitance Cn (F)
(Terminal B)
N
Parasitic elements
P +
1000P
O
Shutdown
switch
W : With switch
Fig.37
W
7/8
B
0.01μ
E
N
N
Transistor (NPN)
P
GND
P
0.1μ
P +
H F V
Package
HFV : HVSOF6
BH30MA3WHFV
~ Condition ~
VIN=4.0V
Cin=1.0μF
Co=1.0μF
ROUT=3.0kΩ
Ta=25°C
N
G : SSOP5
GND
HVSOF5
Other adjacent elements
(Terminal B)
-
Package specification
TR : Embossed taping
Fig. 36: Example of bypass
(Terminal A)
T R
V
CTL
diode connection
CC
GND
B
back current
Technical Note
2010.07 - Rev. C
GND
C
E
OUT
GND
Parasitic element
Parasitic elements