ALD1107PBL Advanced Linear Devices Inc, ALD1107PBL Datasheet - Page 2

• Manufacturer Part Number: ALD1107PBL
• Description: MOSFET 2P-CH 13.2V QUAD 14PDIP
• Manufacturer: Advanced Linear Devices Inc

Specifications of ALD1107PBL

• Package / Case: 14-DIP (0.300", 7.62mm)
• Fet Type: 4 P-Channel (H-Bridge)
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 13.2V
• Vgs(th) (max) @ Id: 1V @ 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Minimum Operating Temperature: 0 C
• Configuration: Quad
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1800 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 0.00067 S
• Drain-source Breakdown Voltage: 13.2 V
• Gate-source Breakdown Voltage: 13.2 V
• Continuous Drain Current: - 2 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Current - Continuous Drain (id) @ 25° C: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1014-1014

ALD1107/ALD1117
Transconductance
Gate Threshold
Voltage
Offset Voltage
V
Gate Threshold
Temperature
Drift
On Drain
Current
Mismatch
Output
Conductance
Drain Source
On Resistance
Drain Source
On Resistance
Mismatch
Drain Source
Breakdown
Voltage
Off Drain
Current
Gate Leakage
Current
Input
Capacitance
Notes:
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
Gate-source voltage, V
Power dissipation
Operating temperature range
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
T
Parameter
GS1
A
2
-V
= 25 C unless otherwise specified
GS2
1
1
2
Consists of junction leakage currents
Sample tested parameters
2
I
R
BV
DS (OFF)
I
C
Symbol
GSS
R
V
V
TC
I
G
G
DS (ON)
ISS
DS (ON)
DS (ON)
G
T
OS
IS
OS
DSS
VT
fs
GS
DS
0.25
-0.4
-1.3
-12
Min
PA, SA, PB, SB package
DA, DB package
ALD1107
1200
0.67
-0.7
-1.3
Typ
0.5
0.5
0.1
40
10
-2
2
1
1800
Advanced Linear Devices
-1.0
Max
400
10
10
4
1
3
0.25
-0.4
-1.3
Min
-12
ALD1117
1200
0.67
-0.7
-1.3
Typ
0.5
0.5
0.1
40
10
-2
2
1
1800
-1.0
400
Max
10
10
4
1
3
mV/ C
V
mV
mA
mmho V
%
%
V
pA
nA
pA
nA
pF
Unit
mho
I
DS
I
V
V
V
V
I
V
T
V
T
DS
DS
GS
DS
DS
DS
DS
DS
A
DS
A
= -1.0 A V
= 125 C
= 125 C
-55 C to +125 C
-65 C to +150 C
= -10 A V
= -1.0 A V
= -5V I
= -5V I
= -0.1V V
= -0.1V V
= -12V V
= 0V V
Conditions
= V
0 C to +70 C
Test
DS
= -5V
DS
DS
500 mW
GS
+260 C
GS
GS
GS
-13.2V
-13.2V
GS
= -10mA
GS
GS
= -10mA
= -12V
= V
= 0V
= V
= 0V
= -5V
= -5V
DS
DS
2