ALD1107PBL Advanced Linear Devices Inc, ALD1107PBL Datasheet - Page 5
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ALD1107PBL
Manufacturer Part Number
ALD1107PBL
Description
MOSFET 2P-CH 13.2V QUAD 14PDIP
Manufacturer
Advanced Linear Devices Inc
Datasheet
1.ALD1117PAL.pdf
(6 pages)
Specifications of ALD1107PBL
Package / Case
14-DIP (0.300", 7.62mm)
Fet Type
4 P-Channel (H-Bridge)
Fet Feature
Standard
Drain To Source Voltage (vdss)
13.2V
Vgs(th) (max) @ Id
1V @ 1µA
Power - Max
500mW
Mounting Type
Through Hole
Minimum Operating Temperature
0 C
Configuration
Quad
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
1800 Ohm @ 5 V
Forward Transconductance Gfs (max / Min)
0.00067 S
Drain-source Breakdown Voltage
13.2 V
Gate-source Breakdown Voltage
13.2 V
Continuous Drain Current
- 2 mA
Power Dissipation
500 mW
Maximum Operating Temperature
+ 70 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Current - Continuous Drain (id) @ 25° C
-
Rds On (max) @ Id, Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1014-1014
ALD1107/ALD1117
I
SOURCE
I
SOURCE
I
SOURCE
Q
Q
N- CHANNEL CURRENT SOURCE
Q
1,
2
Q
Q
1
Q
, Q
2
4
8
2
2
= I
: N - Channel MOSFET
, Q
SET
3
, Q
4
=
: N - Channel MOSFET
V + - Vt
ALD1106
R
SET
I
SET
1/2 ALD1106
or ALD1116
~
=
I
SET
V + = +5V
V + - 1.0
R
SET
R
V + = +5V
Q
SET
1
R
=
CASCODE CURRENT SOURCES
~
SET
Q
Q
BASIC CURRENT SOURCES
3
1
R
4
SET
Advanced Linear Devices
I
I
SET
Q1, Q2, Q3, Q4: P - Channel MOSFET
SET
I
P- CHANNEL CURRENT SOURCE
SOURCE
QP
QP
Q
Q
1
3
1
1
, QP
= I
R
2
: P - Channel MOSFET
R
SET
SET
SET
=
V + = +5V
V + = +5V
V + - 2Vt
R
SET
1/2 ALD1107
or ALD1117
~
=
ALD1107
R
QP
I
3
SET
SOURCE
2
Q
Q
I
SOURCE
2
4
5