SI3900DV-T1-GE3 Vishay, SI3900DV-T1-GE3 Datasheet - Page 2
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SI3900DV-T1-GE3
Manufacturer Part Number
SI3900DV-T1-GE3
Description
MOSFET N-CH D-S 20V 6-TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI3900DV-T1-E3.pdf
(5 pages)
Specifications of SI3900DV-T1-GE3
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
125 mOhm @ 2.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
4nC @ 4.5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
6-TSOP (0.063", 1.60mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
2.4A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
125mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI3900DV-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3900DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si3900DV
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
10
8
6
4
2
0
0
a
a
1
V
DS
Output Characteristics
a
- Drain-to-Source Voltage (V)
J
= 25 °C, unless otherwise noted
V
GS
2
a
= 4.5 V thru 3.5 V
3
3 V
2.5 V
Symbol
R
1.5 V
V
2 V
I
t
t
I
I
DS(on)
V
GS(th)
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
t
SD
t
rr
gd
fs
gs
r
f
g
4
V
V
I
DS
D
DS
5
≅ 1 A, V
I
= 10 V, V
F
= 20 V, V
V
V
V
V
V
V
V
I
= 3.0 A, dI/dt = 100 A/µs
DS
S
DS
V
DS
GS
GS
DD
DS
DS
= 1.05 A, V
Test Conditions
= 0 V, V
= V
≥ 5 V, V
= 20 V, V
= 4.5 V, I
= 2.5 V, I
= 10 V, R
= 5 V, I
GEN
GS
GS
GS
, I
= 4.5 V, R
= 4.5 V, I
= 0 V, T
GS
D
GS
D
D
D
= 250 µA
GS
GS
L
= 2.4 A
= ± 12 V
= 4.5 V
= 2.4 A
= 1.0 A
= 10 Ω
= 0 V
= 0 V
J
D
10
g
= 85 °C
8
6
4
2
0
= 2.4 A
= 6 Ω
0.0
0.5
V
1.0
GS
Transfer Characteristics
Min.
0.6
5
- Gate-to-Source Voltage (V)
1.5
0.100
0.160
S09-2275-Rev. D, 02-Nov-09
Typ.
0.79
2.0
2.1
0.3
0.4
10
30
14
30
5
6
Document Number: 71178
T
C
25 °C
2.5
= - 55 °C
0.125
0.200
Max.
±100
1.10
1.5
4.0
10
17
50
25
12
50
1
3.0
125 °C
3.5
Unit
nA
µA
nC
ns
Ω
V
A
S
V
4.0