SI3900DV Vishay Siliconix, SI3900DV Datasheet

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... 85_C 25_C 85_C stg Symbol sec R thJA Steady State Steady State R thJF Si3900DV Vishay Siliconix N-Channel MOSFET 5 sec Steady State 20 "12 2.4 2.0 1.7 1.4 8 1.05 0.75 1.15 0.83 0.59 0.53 –55 to 150 Typical Maximum 93 ...

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... Si3900DV Vishay Siliconix _ Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ...

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... T J 0.1 0.00 0.3 0.6 0.9 V – Source-to-Drain Voltage (V) SD Document Number: 71178 S-03511—Rev. B, 16-Apr- 4 2.0 2.5 = 25_C 1.2 1.5 Si3900DV Vishay Siliconix Capacitance 300 250 C iss 200 150 100 C oss 50 C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

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... Si3900DV Vishay Siliconix Threshold Voltage 0.4 = 250 0.2 –0.0 –0.2 –0.4 –0.6 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 ...