SI4501ADY-T1-GE3 Vishay, SI4501ADY-T1-GE3 Datasheet
SI4501ADY-T1-GE3
Specifications of SI4501ADY-T1-GE3
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SI4501ADY-T1-GE3 Summary of contents
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... Top View Ordering Information: Si4501ADY-T1-E3 (Lead (Pb)-free) Si4501ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si4501ADY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... I - Drain Current (A) D On-Resistance vs. Drain Current 8 Total Gate Charge (nC) g Gate Charge Document Number: 71922 S09-0868-Rev. D, 18-May- 2000 1600 1200 Si4501ADY Vishay Siliconix ° ° Gate-to-Source Voltage GS Transfer Characteristics C iss 800 C oss 400 C rss Drain-to-Source Voltage (V) DS Capacitance 1.2 1.0 ...
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... Si4501ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0 250 µA D 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.10 0.08 0.06 0. °C J 0.02 0.00 0.8 1 ...
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... Single Pulse 0. Document Number: 71922 S09-0868-Rev. D, 18-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4501ADY Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA ( ...
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... Si4501ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 3 Drain-to-Source Voltage (V) DS Output Characteristics 0. 0. 0.02 0. Drain Current (A) D On-Resistance vs. Drain Current 5 Total Gate Charge (nC) g Gate Charge www.vishay.com 2000 1600 1200 ° ° 0.5 1 ...
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... Limited DS(on °C A Single Pulse 0.1 0.01 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area Si4501ADY Vishay Siliconix Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient 100 ...
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... Si4501ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...