SI4501ADY-T1-GE3 Vishay, SI4501ADY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4501ADY-T1-GE3
• Description: MOSFET N/P-CH 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4501ADY-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 8.8A, 10V
• Drain To Source Voltage (vdss): 30V, 8V
• Current - Continuous Drain (id) @ 25° C: 6.3A, 4.1A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 42mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 1.3W
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4501ADY-T1-GE3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71922
S09-0868-Rev. D, 18-May-09
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.05
0.2
0.1
0.02
Duty Cycle = 0.5
0.2
0.05
0.02
0.1
Single Pulse
10
-3
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
- T
A
t
1
1
= P
t
Vishay Siliconix
2
DM
Z
Si4501ADY
thJA
thJA
100
t
t
(t)
1
2
= 75 °C/W
www.vishay.com
600
10
5