FDS8958A_F085 Fairchild Semiconductor, FDS8958A_F085 Datasheet - Page 3

• Manufacturer Part Number: FDS8958A_F085
• Description: MOSFET N/P-CH 30V DUAL 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8958A_F085

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A, 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 19 mOhms, 42 mOhms
• Forward Transconductance Gfs (max / Min): 25 S, 10 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 7 A, - 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8958A_F085TR

FDS8958A_F085 Rev. A
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, I
Symbol
Switching Characteristics
t
t
t
t
Q
Q
Q
I
I
V
t
Q
Starting TJ = 25°C, L = 3mH, I
the drain pins. R
Electrical Characteristics
Drain–Source Diode Characteristics and Maximum Ratings
d(on)
r
d(off)
f
S
S M
rr
θJA
SD
g
gs
gd
rr
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
Maximum Plused Drain-Source Diode Forward Current
θJC
is guaranteed by design while R
a) 78°/W when
Parameter
mounted on a
0.5 in
copper
AS
AS
= 3A, V
= 6A, V
2
pad of 2 oz
DD
DD
= 30V, V
= 30V, V
(Note 2)
GS
GS
θCA
= 10V (Q2).
= 10V (Q1).
Q1
V
V
Q2
V
V
Q1
V
Q2
V
V
V
Q1
I
Q2
I
F
F
is determined by the user' s board design.
(continued)
DD
GS
DD
GS
DS
DS
GS
GS
= 7 A, d
= -5 A, d
= 15 V, I
= 10V, R
= -15 V, I
= -10V, R
= 15 V, I
= -15 V, I
= 0 V, I
= 0 V, I
Test Conditions
b) 125°/W when
iF
iF
S
S
/d
/d
D
D
mounted on a .02 in
pad of 2 oz copper
GEN
= 1.3 A
= -1.3 A
D
D
t
GEN
t
= 1 A,
= 7 A, V
= 100 A/µs
= 100 A/µs
= -5 A,V
= -1 A,
= 6 Ω
= 6 Ω
3
T
A
= 25°C unless otherwise noted
GS
GS
= 10 V
= -10 V
2
(Note 2)
(Note 2)
(Note 2)
Type Min
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
c) 135°/W when mounted on a
minimum pad.
-0.88
Typ Max Units
11.4
0.75
9.6
1.7
2.2
2.1
1.7
13
23
14
19
19
8
7
5
3
9
9
6
www.fairchildsemi.com
-1.3
-20
-1.2
1.3
1.2
16
13
16
14
10
24
37
25
17
20
6
nC
nC
nC
nS
nC
ns
ns
ns
ns
A
V
A