FDS8958A_F085 Fairchild Semiconductor, FDS8958A_F085 Datasheet - Page 7

• Manufacturer Part Number: FDS8958A_F085
• Description: MOSFET N/P-CH 30V DUAL 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8958A_F085

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A, 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 19 mOhms, 42 mOhms
• Forward Transconductance Gfs (max / Min): 25 S, 10 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 7 A, - 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8958A_F085TR

FDS8958A_F085 Rev. A
Typical Characteristics: Q2 (P-Channel)
0.001
0.01
0.1
0.0001
1
D = 0.5
0.2
0.1
0.05
0.02
0.001
0.01
SINGLE PULSE
Transient thermal response will change depending on the circuit board design.
Thermal characterization performed using the conditions described in Note 1c.
Figure 23. Transient Thermal Response Curve.
0.01
0.1
t
1
, TIME (sec)
7
1
10
P(pk)
P(pk)
Duty Cycle, D = t
T
R
R
J
JA
- T
J A
100
(t) = r(t) * R
= 135 °C/W
A
t
t
1
1
= P * R
t
t
www.fairchildsemi.com
2
2
J A
1
A
(t)
/ t
2
1000