FDML7610S Fairchild Semiconductor, FDML7610S Datasheet
FDML7610S
Specifications of FDML7610S
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FDML7610S Summary of contents
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... Thermal Resistance, Junction to Case θJC Package Marking and Ordering Information Device Marking Device FDML7610S FDML7610S ©2010 Fairchild Semiconductor Corporation FDML7610S Rev.C1 ® MOSFET General Description This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally = ...
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... Fall Time f Q Total Gate Charge g Q Total Gate Charge g Q Gate to Source Gate Charge gs Q Gate to Drain “Miller” Charge gd ©2010 Fairchild Semiconductor Corporation FDML7610S Rev. °C unless otherwise noted J Test Conditions = 250 μ mA 250 μA, referenced to 25 °C I ...
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... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. ©2010 Fairchild Semiconductor Corporation FDML7610S Rev. °C unless otherwise noted J Test Conditions ...
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... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDML7610S Rev. °C unless otherwise noted J μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1.5 2 100 125 150 - 0.001 3.0 3.5 4.0 ...
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... GS Limited by Package CASE TEMPERATURE ( , T C Figure 9. Maximum Continuous Drain Current vs Case Temperature 1000 100 Figure 11. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDML7610S Rev. °C unless otherwise noted J 2000 1000 100 C/W θ JC 0.01 100 125 150 Figure 10. Forward Bias Safe Operating Area ...
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... Typical Characteristics (Q1 N-Channel) 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDML7610S Rev. °C unless otherwise noted J SINGLE PULSE 150 C/W θ Note RECTANGULAR PULSE DURATION (sec) ...
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... DUTY CYCLE = 0.5% MAX 125 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 17. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDML7610S Rev. unlenss otherwise noted J μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0.6 0.8 Figure 14. Normalized on-Resistance vs Drain 50 75 100 125 150 - ...
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... 4 Limited by package CASE TEMPERATURE ( , T C Figure 21. Maximun Continuous Drain Current vs Case Temperature 300 100 10 1 0.001 0.01 ©2010 Fairchild Semiconductor Corporation FDML7610S Rev. unless otherwise noted J 5000 1000 3.5 C/W θ JC 100 125 150 0 PULSE WIDTH (sec) Figure 23. Single Pulse Maximum Power Dissipation ...
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... Typical Characteristics (Q2 SyncFET) 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure24. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDML7610S Rev. unless otherwise noted J SINGLE PULSE 140 C/W θ JA Note RECTANGULAR PULSE DURATION (sec NOTES: ...
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... 100 TIME (ns) Figure 25. FDML7610S SyncFET body diode reverse recovery characteristic ©2010 Fairchild Semiconductor Corporation FDML7610S Rev.C1 (continued) Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device. 10000 1000 μ ...
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... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDML7610S Rev.C1 11 www.fairchildsemi.com ...
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... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDML7610S Rev.C1 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...