FDML7610S Fairchild Semiconductor, FDML7610S Datasheet - Page 2

• Manufacturer Part Number: FDML7610S
• Description: MOSFET N-CH 30V DUAL 8-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDML7610S

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A, 17A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1750pF @ 15V
• Power - Max: 800mW, 900mW
• Mounting Type: Surface Mount
• Package / Case: *
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.006ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDML7610STR

©2010 Fairchild Semiconductor Corporation
FDML7610S Rev.C1
Dynamic Characteristics
Electrical Characteristics
Off Characteristics
On Characteristics
Switching Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
DS(on)
FS
GS(th)
iss
oss
rss
g
ΔT
ΔT
g
g
gs
gd
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Parameter
T
J
= 25 °C unless otherwise noted
I
I
I
I
V
V
V
V
I
I
V
V
V
V
V
V
V
V
Q1:
V
Q2:
V
Q1:
V
Q2:
V
V
V
V
D
D
D
D
D
D
V
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DD
DD
GS
GS
GS
GS
= 250 μA, V
= 1 mA, V
= 250 μA, referenced to 25 °C
= 10 mA, referenced to 25 °C
= 250 μA, referenced to 25 °C
= 10 mA, referenced to 25 °C
= 24 V, V
= 5 V, I
= 5 V, I
= 15 V, V
= 15 V, V
= 0 V to 10 V Q1
= 0 V to 4.5 V
= 20 V, V
= V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 4.5 V, I
= 10 V, I
= 15 V, I
= 15 V, I
= 10 V, R
= 10 V, R
DS
DS
Test Conditions
, I
, I
2
D
D
GS
D
D
D
D
D
D
D
D
GS
GS
GEN
DS
= 12 A
= 17 A
D
D
GS
GEN
= 12 A,
= 17 A,
= 250 μA
= 1 mA
GS
= 12 A , T
= 17 A , T
= 12 A
= 17 A
= 0 V
= 10 A
= 14 A
= 0 V
= 0 V, f = 1 MHZ
= 0 V, f = 1 MHZ
= 0 V
= 0 V
= 6 Ω
= 6 Ω
V
I
Q2
V
I
D
D
DD
DD
= 12 A
= 17A
= 15 V,
= 15 V,
J
J
= 125 °C
= 125 °C
Type
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min
30
30
1
1
Typ
1315
2960
1135
455
100
1.8
1.8
6.0
8.5
8.3
3.2
4.1
4.1
15
14
0.9
0.6
63
86
-6
-5
45
8.6
2.5
2.3
3.1
9.3
4.3
8.9
2.2
4.7
13
20
31
20
43
20
4
1750
3940
1510
Max
500
100
100
www.fairchildsemi.com
600
150
7.5
4.2
5.5
12
12
70
1
3
3
6
5
5
18
23
10
10
32
49
10
10
28
60
13
28
mV/°C
mV/°C
Units
mΩ
μA
μA
nA
nA
pF
pF
pF
V
V
S
Ω
nC
nC
nC
nC
ns
ns
ns
ns