SI4913DY-T1-GE3 Vishay, SI4913DY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4913DY-T1-GE3
• Description: MOSFET P-CH D-S 20V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4913DY-T1-GE3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 9.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.1A
• Vgs(th) (max) @ Id: 1V @ 500µA
• Gate Charge (qg) @ Vgs: 65nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 9.4A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 24mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4913DY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71997
S09-0870-Rev. D, 18-May-09
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
40
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 9.4 A
0.2
On-Resistance vs. Drain Current
= 10 V
10
6
V
GS
V
T
Q
0.4
SD
J
g
= 1.8 V
= 150 °C
I
- Total Gate Charge (nC)
D
- Source-to-Drain Voltage (V)
- Drain Current (A)
Gate Charge
12
20
0.6
0.8
18
30
V
GS
T
J
= 2.5 V
1.0
V
= 25 °C
GS
40
24
= 4.5 V
1.2
30
50
1.4
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
6000
5000
4000
3000
2000
1000
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
C
D
V
I
D
- 25
rss
GS
= 3 A
= 9.4 A
= 4.5 V
1
4
V
T
0
GS
J
V
DS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
2
8
50
C
I
Vishay Siliconix
D
C
oss
iss
= 9.4 A
12
3
75
Si4913DY
www.vishay.com
100
4
16
125
150
20
5
3