SI4913DY-T1-GE3 Vishay, SI4913DY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4913DY-T1-GE3
• Description: MOSFET P-CH D-S 20V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4913DY-T1-GE3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 9.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.1A
• Vgs(th) (max) @ Id: 1V @ 500µA
• Gate Charge (qg) @ Vgs: 65nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 9.4A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 24mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4913DY-T1-GE3TR

Si4913DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.01
0.1
- 50
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
25
10
- Temperature (°C)
-3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 500 µA
75
0.01
100
0.1
10
100
10
1
0.1
-2
Safe Operating Area, Junction-to-Ambient
Limited by R
Limited
* V
125
I
D(on)
DS
Single Pulse
T
> minimum V
A
150
= 25 °C
V
DS
Square Wave Pulse Duration (s)
DS(on)
- Drain-to-Source Voltage (V)
10
1
-1
*
BVDSS Limited
GS
at which R
DS(on)
10
1
50
40
30
20
10
I
0
DM
is specified
10
Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
-2
10
100
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
DM
JM
- T
1
t
A
1
Time (s)
S09-0870-Rev. D, 18-May-09
= P
t
2
DM
Document Number: 71997
Z
thJA
thJA
100
10
t
t
1
2
(t)
= 85 °C/W
100
600
600