FDC8601 Fairchild Semiconductor, FDC8601 Datasheet - Page 2

• Manufacturer Part Number: FDC8601
• Description: MOSFET N-CH 100V TRENCH SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC8601

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 109 mOhm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 10V
• Input Capacitance (ciss) @ Vds: 210pF @ 50V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: TSOT-23-6, TSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC8601TR

©2010 Fairchild Semiconductor Corporation
FDC8601 Rev. C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. Starting T
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
θJC
DS(on)
FS
GS(th)
SD
ΔT
ΔT
iss
oss
rss
g
g(TOT)
gs
gd
rr
Symbol
θJA
DSS
GS(th)
is guaranteed by design while R
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
J
= 25
o
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C, L = 3 mH, I
AS
= 3 A, V
θCA
Parameter
is determined by the user's board design.
DD
= 100 V, V
T
a. 78 °C/W when mounted on
J
GS
= 25 °C unless otherwise noted
a 1 in
= 10 V.
2
pad of 2 oz copper
I
I
V
V
V
V
V
V
V
I
V
I
V
V
V
V
V
f = 1 MHz
D
D
F
D
DS
GS
DD
GS
GS
GS
GS
GS
GS
GS
GS
DD
DS
= 2.7 A, di/dt = 100 A/μs
= 250 μA, V
= 250 μA, referenced to 25 °C
= 250 μA, referenced to 25 °C
= 80 V, V
= 0 V, I
= ±20 V, V
= 50 V, V
= 50 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 5 V
= V
= 10 V, I
= 6 V, I
= 10 V, I
= 10 V, I
2
DS
Test Conditions
, I
S
D
D
D
= 2.7 A
D
D
D
GS
GS
GEN
GS
= 2.1 A
= 2.7 A,
DS
= 250 μA
= 2.7 A
= 2.7 A, T
= 2.7 A
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 2.7 A
= 50 V
J
= 125 °C
(Note 2)
b.175 °C/W when mounted on
a minimum pad of 2 oz copper
Min
100
2.0
0.85
Typ
119
144
155
4.5
1.3
7.6
1.7
0.9
0.8
3.0
2.2
0.9
34
21
46
70
86
-8
5
2
3
±100
Max
210
www.fairchildsemi.com
109
176
183
1.3
4.0
10
10
16
10
54
34
65
5
3
5
1
mV/°C
mV/°C
Units
mΩ
nC
nC
nC
nC
nC
μA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
V
S