FDC8601 Fairchild Semiconductor, FDC8601 Datasheet - Page 4

• Manufacturer Part Number: FDC8601
• Description: MOSFET N-CH 100V TRENCH SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC8601

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 109 mOhm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 10V
• Input Capacitance (ciss) @ Vds: 210pF @ 50V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: TSOT-23-6, TSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC8601TR

©2010 Fairchild Semiconductor Corporation
FDC8601 Rev. C
Typical Characteristics
0.001
0.01
0.1
10
20
10
7
6
5
4
3
2
1
Figure 7.
0.01
8
6
4
2
0
1
0.1
0
Figure 9.
I
THIS AREA IS
LIMITED BY r
D
Figure 11.
= 2.7 A
Switching Capability
V
Gate Charge Characteristics
DS
t
AV
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
1
Unclamped Inductive
, TIME IN AVALANCHE (ms)
SINGLE PULSE
T
R
T
V
DS(on)
1
Q
J
A
θ
DD
T
JA
g
= MAX RATED
= 25
Forward Bias Safe
J
, GATE CHARGE (nC)
= 50 V
= 125
= 175
V
DD
0.1
o
C
= 25 V
o
o
T
C
C/W
J
2
= 25
10
T
V
J
DD
o
C
= 25 °C unless otherwise noted
T
= 75 V
J
= 100
3
o
C
100
1
100 us
1 s
DC
1 ms
10 ms
100 ms
10 s
2
400
4
4
300
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
300
100
10
0.5
10
1
Figure 10.
25
1
0.1
10
Figure 12.
-4
R
Current vs Ambient Temperature
Figure 8.
f = 1 MHz
V
θ
JA
GS
= 78
10
= 0 V
V
-3
50
DS
o
T
C/W
Maximum Continuous Drain
Power Dissipation
to Source Voltage
C
, DRAIN TO SOURCE VOLTAGE (V)
,
Capacitance vs Drain
10
Ambient TEMPERATURE (
Single Pulse Maximum
t, PULSE WIDTH (sec)
-2
1
75
V
GS
10
V
= 6 V
-1
GS
= 10 V
100
1
SINGLE PULSE
R
T
10
A
θ
JA
= 25
10
= 175
o
C )
125
o
C
www.fairchildsemi.com
o
100
C
C
C
C/W
oss
iss
rss
150
1000
100