FCH22N60N Fairchild Semiconductor, FCH22N60N Datasheet - Page 2

• Manufacturer Part Number: FCH22N60N
• Description: MOSFET N-CH 500V 22A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: SupreMOS™r

Specifications of FCH22N60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 165 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1950pF @ 100V
• Power - Max: 205W
• Mounting Type: Through Hole
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.14 Ohms
• Forward Transconductance Gfs (max / Min): 22 S
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 22 A
• Power Dissipation: 205 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 4 ns
• Gate Charge Qg: 45 nC
• Rise Time: 16.7 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCH22N60N Rev. A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
3. I
4. Essentially Independent of Operating Temperature Typical Characteristics
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
R
g
C
C
C
C
C
Q
Q
Q
ESR
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
ΔT
FS
GS(th)
DS(on)
iss
oss
rss
oss
oss
SD
g(tot)
gs
gd
rr
AS
SD
Device Marking
DSS
Symbol
J
= 7.3A, R
≤ 22A, di/dt ≤ 200A/μs, V
DSS
eff.
FCH22N60N
G
= 25Ω, Starting T
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
≤ 380V, Starting T
J
= 25°C
FCH22N60N
Device
Parameter
J
= 25°C
Package
TO247
I
I
I
V
V
V
V
V
dI
V
V
V
V
R
V
f = 1MHz
V
V
V
V
Drain Open, f=1MHz
D
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
DS
DS
GS
G
F
= 1mA, V
= 1mA, V
= 1mA, Referenced to 25
/dt = 100A/μs
= 4.7Ω
= 480V, V
= 480V, T
= 0V, I
= ±50V, V
= 20V, I
= 0V, I
= V
= 10V, I
= 100V, V
= 380V, V
= 0V to 480V, V
= 380V, I
= 10V
= 380V, I
DS
T
Test Conditions
, I
C
2
SD
SD
GS
GS
D
Reel Size
D
= 25
D
D
D
= 11A
= 11A
= 11A
GS
J
= 11A
DS
= 250μA
GS
GS
= 0V,T
= 0V, T
= 11A
= 125
= 11A,
o
-
= 0V
= 0V
= 0V
= 0V, f = 1MHz
C unless otherwise noted
GS
o
J
J
C
= 25
= 0V
= 150
o
o
C
C
o
(Note 4)
(Note 4)
C
Tape Width
-
Min.
600
650
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
196.4
0.140
1950
Typ.
16.9
16.7
0.68
75.9
43.2
14.5
350
8.7
49
45
22
4
6
3
3
1
-
-
-
-
-
-
-
-
www.fairchildsemi.com
Quantity
Max.
0.165
±100
100
1.2
4.0
10
22
66
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
30
-
-
-
Units
V/
nC
nC
nC
μA
pF
pF
pF
pF
pF
nA
ns
ns
ns
ns
ns
μC
Ω
Ω
A
A
V
V
S
V
o
C