FCH22N60N Fairchild Semiconductor, FCH22N60N Datasheet - Page 3

MOSFET N-CH 500V 22A TO-247

FCH22N60N

Manufacturer Part Number
FCH22N60N
Description
MOSFET N-CH 500V 22A TO-247
Manufacturer
Fairchild Semiconductor
Series
SupreMOS™r
Datasheet

Specifications of FCH22N60N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
165 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1950pF @ 100V
Power - Max
205W
Mounting Type
Through Hole
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.14 Ohms
Forward Transconductance Gfs (max / Min)
22 S
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
22 A
Power Dissipation
205 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
4 ns
Gate Charge Qg
45 nC
Rise Time
16.7 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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FCH22N60N Rev. A
Typical Performance Characteristics
10000
1000
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
100
1E5
100
Figure 1. On-Region Characteristics
0.1
0.4
0.3
0.2
0.1
10
10
1
1
0.1
0
0.3
*Notes:
1. 250
2. T
C
C
10
C
C
= 25
Drain Current and Gate Voltage
iss
V
rss
μ
V
oss
s Pulse Test
DS
DS
, Drain-Source Voltage [V]
o
,Drain-Source Voltage[V]
1
C
I
D
, Drain Current [A]
20
1
V
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
*Note:
GS
1. V
2. f = 1MHz
= 10V
30
GS
10
= 0V
*Note: T
40
V
V
(
GS
C ds = shorted
GS
=
100
= 20V
C
15.0 V
10.0 V
50
8.0 V
7.0 V
6.0 V
5.0 V
4.0 V
= 25
o
C
)
10
600
60
3
Figure 2. Transfer Characteristics
100
Figure 4. Body Diode Forward Voltage
100
Figure 6. Gate Charge Characteristics
10
10
10
1
1
8
6
4
2
0
0.0
2
0
V
SD
3
10
Variation vs. Source Current
and Temperature
, Body Diode Forward Voltage [V]
V
Q
150
GS
g
, Total Gate Charge [nC]
,Gate-Source Voltage[V]
0.5
o
4
C
150
V
V
V
20
DS
DS
DS
o
C
= 120V
= 300V
= 480V
5
25
*Notes:
-55
o
1. V
2. 250
30
C
*Notes:
1. V
2. 250
o
25
1.0
C
*Note: I
DS
6
o
GS
μ
C
= 20V
s Pulse Test
μ
= 0V
s Pulse Test
40
D
7
= 11A
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1.5
50
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