FDMA507PZ Fairchild Semiconductor, FDMA507PZ Datasheet - Page 3

• Manufacturer Part Number: FDMA507PZ
• Description: MOSFET P-CH 20V 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA507PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7.8A, 5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 5V
• Input Capacitance (ciss) @ Vds: 2015pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 45 mOhms
• Forward Transconductance Gfs (max / Min): 33 S
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 7.8 A
• Power Dissipation: 2.4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 30 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA507PZTR

©2010 Fairchild Semiconductor Corporation
FDMA507PZ Rev.C
Typical Characteristics
24
20
16
12
24
20
16
12
1.6
1.4
1.2
1.0
0.8
0.6
Figure 3. Normalized On Resistance
8
4
0
8
4
0
Figure 1.
0
-75
0
Figure 5. Transfer Characteristics
V
V
V
V
GS
GS
GS
GS
V
I
-50
D
GS
vs Junction Temperature
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= -4.5 V
= -3 V
= -2.5 V
= -5 V
= -7.8 A
-V
-V
= -5 V
0.2
T
V
DS
GS
J
DS
-25
, JUNCTION TEMPERATURE
0.5
On Region Characteristics
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
= -5 V
0
T
0.4
J
V
= 150
GS
25
1.0
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= -1.8 V
o
C
µ
50
s
T
0.6
J
= 25 °C unless otherwise noted
T
75
J
T
= -55
J
1.5
= 25
100 125 150
0.8
(
o
o
C
C
o
C
)
µ
s
1.0
2.0
3
0.001
0.01
2.5
2.0
1.5
1.0
0.5
0.1
160
120
20
10
80
40
1
Figure 2.
Figure 4.
0
Forward Voltage vs Source Current
0
1
0
vs Drain Current and Gate Voltage
Figure 6.
V
T
GS
-V
J
SD
= 25
= 0 V
-V
T
0.2
J
, BODY DIODE FORWARD VOLTAGE (V)
4
GS
= 150
Normalized On-Resistance
o
V
On-Resistance vs Gate to
I
C
-I
, GATE TO SOURCE VOLTAGE (V)
D
GS
D
Source Voltage
2
= - 7.8 A
Source to Drain Diode
, DRAIN CURRENT(A)
V
o
= -1.8 V
C
GS
0.4
T
8
J
= -3 V
= 125
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
o
V
T
0.6
12
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
C
3
J
GS
= -55
V
= -2.5 V
GS
= -4.5 V
o
C
0.8
16
T
J
= 25
4
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o
V
C
1.0
20
µ
GS
s
= -5 V
µ
s
1.2
24
5