SI7703EDN-T1-GE3 Vishay, SI7703EDN-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7703EDN-T1-GE3
• Description: MOSFET P-CH D-S 20V 1212-8 PPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7703EDN-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 1V @ 800µA
• Gate Charge (qg) @ Vgs: 18nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: -6.3A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 90mohm
• Rds(on) Test Voltage Vgs: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7703EDN-T1-GE3TR

MOSFET TYPICAL CHARACTERISTICS T
Document Number: 71429
S-83043-Rev. C, 22-Dec-08
0.15
0.12
0.09
0.06
0.03
0.00
20
16
12
8
6
4
2
0
8
4
0
0.0
0
0
V
Gate-Current vs. Gate-Source Voltage
0.5
GS
On-Resistance vs. Drain Current
= 1.8 V
4
V
V
1.0
DS
GS
4
Output Characteristics
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
I
D
1.5
- Drain Current (A)
8
V
2.0
GS
8
= 5 thru 2.5 V
V
12
GS
2.5
= 2.5 V
V
3.0
12
GS
16
= 4.5 V
1.5 V
3.5
2 V
A
4.0
20
16
= 25 °C, unless otherwise noted
10000
0.001
1000
2000
1600
1200
0.01
100
800
400
0.1
10
20
16
12
1
8
4
0
0
0.0
0
0
C
rss
Gate Current vs. Gate-Source Voltage
T
J
0.5
= 150 °C
V
4
DS
3
V
V
GS
GS
Transfer Characteristics
- Drain-to-Source Voltage (V)
T
- Gate-to-Source Voltage (V)
J
1.0
- Gate-to-Source Voltage (V)
= 25 °C
Capacitance
C
8
6
os s
C
1.5
T
is s
Vishay Siliconix
C
25 °C
= - 55 °C
Si7703EDN
1 2
9
2.0
www.vishay.com
1 6
12
2.5
125 °C
3.0
20
15
3