SI7703EDN-T1-GE3 Vishay, SI7703EDN-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI7703EDN-T1-GE3
• Description: MOSFET P-CH D-S 20V 1212-8 PPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7703EDN-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 1V @ 800µA
• Gate Charge (qg) @ Vgs: 18nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: -6.3A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 90mohm
• Rds(on) Test Voltage Vgs: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7703EDN-T1-GE3TR

Si7703EDN
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71429.
www.vishay.com
6
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
Single Pulse
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
150
120
90
60
30
0
10
0
-3
10
-2
4
V
KA
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
Capacitance
- Reverse Voltage (V)
8
A
10
= 25 °C, unless otherwise noted
-1
10
12
-2
16
1
20
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
1 0
Notes:
10
P
DM
JM
-1
- T
A
t
1
= P
S-83043-Rev. C, 22-Dec-08
t
2
DM
Document Number: 71429
Z
thJ A
th J A
100
(t)
t
t
1
2
= 91 °C/W
600
1