SUD06N10-225L-E3 Vishay, SUD06N10-225L-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD06N10-225L-E3
• Description: MOSFET N-CH 100V 6.5A DPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD06N10-225L-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 5V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 0.16ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-252
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: Q5396740VS; SUD06N10-225L-E3; SUD06N10-225L-E3TR

Document Number: 71253
S−42350—Rev. B, 20-Dec-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
350
300
250
200
150
100
15
12
15
12
50
9
6
3
0
9
6
3
0
0
0
0
0
20
2
V
3
V
DS
DS
Output Characteristics
− Drain-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
I
Transconductance
D
− Drain Current (A)
Capacitance
40
4
6
C
oss
60
V
6
9
4 V
GS
= 10 thru 5 V
C
T
iss
C
= −55_C
C
12
80
8
rss
125_C
3, 2 V
25_C
100
10
15
0.30
0.25
0.20
0.15
0.10
0.05
0.00
15
12
10
9
6
3
0
8
6
4
2
0
0
0
0
V
I
V
D
DS
GS
= 6.5 A
On-Resistance vs. Drain Current
= 50 V
= 4.5 V
V
1
3
1
GS
Q
Transfer Characteristics
g
− Gate-to-Source Voltage (V)
I
D
− Total Gate Charge (nC)
− Drain Current (A)
Gate Charge
SUD06N10-225L
2
6
2
Vishay Siliconix
3
9
3
V
T
GS
25_C
C
= −55_C
= 10 V
12
4
4
www.vishay.com
125_C
15
5
5
3