SUD06N10-225L-T1-E3 Vishay, SUD06N10-225L-T1-E3 Datasheet

N CH MOSFET

SUD06N10-225L-T1-E3

Manufacturer Part Number
SUD06N10-225L-T1-E3
Description
N CH MOSFET
Manufacturer
Vishay
Datasheet

Specifications of SUD06N10-225L-T1-E3

Transistor Polarity
N Channel
Continuous Drain Current Id
6.5A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
160mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1V
Power Dissipation Pd
1.5W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes
a.
b.
Document Number: 71253
S−42350—Rev. B, 20-Dec-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v 1%)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
J
Junction-to-Ambient
Junction-to-Case
V
Surface Mounted on 1” x1” FR4 Board.
See SOA curve for voltage derating.
DS
ti
100
100
Order Number: SUD06N10-225L
(V)
t A bi
t
0.225 @ V
a
a
0.200 @ V
r
SUD06N10-225L—E3 (lLead (Pb)-Free)
DS(on)
G
Top View
TO-252
J
J
= 175_C)
= 175_C)
GS
GS
D
Parameter
Parameter
(W)
N-Channel 100-V (D-S) 175_C MOSFET
= 4.5 V
= 10 V
S
b
b
Drain Connected to Tab
I
D
6.5
6.0
(A)
A
= 25_C UNLESS OTHERWISE NOTED)
T
Steady State
L = 0.1 mH
T
T
T
Q
t v 10 sec
C
C
C
A
g
= 125_C
= 25_C
= 25_C
= 25_C
2 7
2.7
(Typ)
Symbol
Symbol
T
R
R
R
V
J
V
E
I
I
P
P
DM
, T
thJC
I
I
I
AR
thJA
DS
GS
AR
D
D
S
D
stg
G
N-Channel MOSFET
Typical
6.0
40
80
D
S
−55 to 175
Limit
" 20
3.75
1.25
1.5 a
100
20
6.5
8.0
6.5
5.0
b
SUD06N10-225L
Maximum
Vishay Siliconix
100
7.5
50
www.vishay.com
Unit
Unit
_C/W
mJ
_C
C/W
W
W
V
V
A
1

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SUD06N10-225L-T1-E3 Summary of contents

Page 1

... DS(on) 0.200 @ 100 100 0.225 @ TO-252 Drain Connected to Tab Top View Order Number: SUD06N10-225L SUD06N10-225L—E3 (lLead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage b b Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

Page 2

... SUD06N10-225L Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g b On-State Drain Current b b Drain-Source On-State Resistance Drain Source On State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... V − Drain-to-Source Voltage (V) DS Document Number: 71253 S−42350—Rev. B, 20-Dec- thru 0. −55_C C 0.25 25_C 0.20 125_C 0.15 0.10 0.05 0. iss C rss 80 100 SUD06N10-225L Vishay Siliconix Transfer Characteristics T = −55_C C 25_C − Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current − Drain Current (A) ...

Page 4

... SUD06N10-225L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0.0 −50 − − Junction Temperature (_C) J THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 100 T − Case Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.02 ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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