SI4490DY-T1-GE3 Vishay, SI4490DY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4490DY-T1-GE3
• Description: MOSFET N-CH 200V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4490DY-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 2.85A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.85A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 1.56W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4490DY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71341
S09-0705-Rev. C, 27-Apr-09
0.20
0.15
0.10
0.05
0.00
20
16
12
50
10
8
4
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 4.0 A
0.2
On-Resistance vs. Drain Current
= 100 V
8
V
15
T
SD
Q
J
g
V
I
= 150 °C
0.4
- Source-to-Drain Voltage (V)
D
- Total Gate Charge (nC)
GS
- Drain Current (A)
Gate Charge
16
= 6 V
0.6
30
24
0.8
V
T
45
GS
J
32
= 25 °C
= 10 V
1.0
40
1.2
60
2500
2000
1500
1000
500
0.25
0.20
0.15
0.10
0.05
0.00
2.5
2.0
1.5
1.0
0.5
0.0
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
= 4.0 A
C
= 10 V
rss
40
V
2
DS
V
T
0
J
GS
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
80
4
C
C
50
oss
Vishay Siliconix
iss
120
I
D
6
75
= 4.0 A
Si4490DY
100
www.vishay.com
160
8
125
200
150
10
3