SI4490DY-T1-GE3 Vishay, SI4490DY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4490DY-T1-GE3
• Description: MOSFET N-CH 200V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4490DY-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 2.85A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.85A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 1.56W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4490DY-T1-GE3TR

Si4490DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71341.
www.vishay.com
4
- 0.5
- 1.0
- 1.5
1.0
0.5
0.0
0.01
0.01
- 50
0.1
0.1
2
1
2
1
10
10
- 4
- 25
- 4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
Single Pulse
- Temperature (°C)
25
10
10
- 3
- 3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
Normalized Thermal Transient Impedance, Junction-to-Foot
10
100
10
- 2
- 2
125
150
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
10
- 1
- 1
1
60
50
40
30
20
10
1
0
0.01
10
0.1
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Time (s)
- T
t
1
A
S09-0705-Rev. C, 27-Apr-09
= P
1
t
2
Document Number: 71341
DM
100
Z
thJA
thJA
100
t
t
1
2
(t)
= 65 °C/W
10
1000
600
100