FDMS8025S Fairchild Semiconductor, FDMS8025S Datasheet

MOSFET N-CH 30V POWER56

FDMS8025S

Manufacturer Part Number
FDMS8025S
Description
MOSFET N-CH 30V POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®, SyncFET™r
Datasheet

Specifications of FDMS8025S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.8 mOhm @ 24A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
3V @ 1mA
Gate Charge (qg) @ Vgs
47nC @ 10V
Input Capacitance (ciss) @ Vds
3000pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.8 mOhms
Forward Transconductance Gfs (max / Min)
145 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
49 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
16 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS8025STR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS8025S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FDMS8025S Rev.C1
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMS8025S
N-Channel PowerTrench
30 V, 49 A, 2.8 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
, T
Max r
Max r
Advanced package and silicon combination for low r
high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
Symbol
Device Marking
STG
FDMS8025S
DS(on)
DS(on)
= 2.8 mΩ at V
= 3.5 mΩ at V
Top
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
GS
FDMS8025S
= 4.5 V, I
= 10 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Power 56
Device
D
D
= 24 A
= 21 A
T
®
C
D
= 25°C unless otherwise noted
D
SyncFET
Parameter
D
DS(on)
D
Bottom
Power 56
Package
and
S
1
TM
S
T
T
T
T
T
General Description
The FDMS8025S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
A
A
C
C
C
DS(on)
S
= 25°C
= 25°C
= 25°C
= 25°C
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
= 25°C
Pin 1
G
while maintaining excellent switching performance.This
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
D
D
D
D
5
6
7
8
Tape Width
12 mm
-55 to +150
Ratings
±20
109
100
2.5
2.5
30
49
24
66
50
50
www.fairchildsemi.com
August 2010
3000 units
4
3
2
1
Quantity
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

Related parts for FDMS8025S

FDMS8025S Summary of contents

Page 1

... FDMS8025S FDMS8025S ©2010 Fairchild Semiconductor Corporation FDMS8025S Rev.C1 ® TM SyncFET General Description The FDMS8025S has been designed to minimize losses power conversion application. Advancements in both silicon and = 21 A package technologies have been combined to offer the lowest D r while maintaining excellent switching performance.This ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° based on starting 0.3 mH N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. ©2010 Fairchild Semiconductor Corporation FDMS8025S Rev. 25°C unless otherwise noted J Test Conditions mA mA, referenced to 25° ...

Page 3

... T J Figure 3. Normalized On Resistance vs Junction Temperature 100 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 125 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMS8025S Rev. 25°C unless otherwise noted μ s 1.5 2 100 125 150 100 0.1 o ...

Page 4

... THIS AREA IS 1 LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMS8025S Rev. 25°C unless otherwise noted J 5000 1000 100 120 100 100 ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0001 - Figure 13. ©2010 Fairchild Semiconductor Corporation FDMS8025S Rev. 25°C unless otherwise noted J SINGLE PULSE 125 C/W θ Note RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve ...

Page 6

... 100 TIME (ns) Figure 14. FDMS8025S SyncFET body diode reverse recovery characteristic ©2010 Fairchild Semiconductor Corporation FDMS8025S Rev.C1 (continued) Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device. 0.01 0.001 0.0001 μ ...

Page 7

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMS8025S Rev.C1 7 www.fairchildsemi.com ...

Page 8

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMS8025S Rev.C1 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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