FDMS8025S Fairchild Semiconductor, FDMS8025S Datasheet - Page 3

• Manufacturer Part Number: FDMS8025S
• Description: MOSFET N-CH 30V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMS8025S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.8 mOhms
• Forward Transconductance Gfs (max / Min): 145 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 49 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 16 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS8025STR

©2010 Fairchild Semiconductor Corporation
FDMS8025S Rev.C1
Typical Characteristics
100
100
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
80
60
40
20
Figure 3. Normalized On Resistance
0
0
Figure 1.
0.0
-75
1
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
DS
D
-50
GS
= 24 A
vs Junction Temperature
= 5 V
= 10 V
T
V
V
-25
J
DS
GS
On Region Characteristics
,
0.5
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
0
2
T
J
= 125
25
V
V
V
V
V
GS
GS
μ
GS
GS
GS
1.0
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= 10 V
= 6 V
= 4.5 V
= 4 V
= 3.5 V
o
50
C
T
J
= 25°C unless otherwise noted
75
3
T
J
1.5
= -55
o
100 125 150
C )
T
J
V
= 25
GS
o
C
= 3 V
o
μ
C
s
2.0
4
3
0.001
0.01
100
0.1
12
10
8
6
4
2
0
9
6
3
0
1
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
GS
V
SD
= 0 V
0.2
20
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
V
On-Resistance vs Gate to
GS
V
I
T
V
Source Voltage
D
4
Source to Drain Diode
GS
,
J
GS
,
GATE TO SOURCE VOLTAGE (V)
= 125
DRAIN CURRENT (A)
I
= 4.5 V
= 3 V
D
= 24 A
0.4
40
o
C
T
J
= -55
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
T
GS
T
o
J
V
J
C
0.6
= 125
GS
60
= 25
= 6 V
T
J
= 3.5 V
= 25
o
o
C
C
o
C
8
0.8
V
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80
GS
V
GS
= 10 V
= 4 V
μ
μ
s
s
100
1.0
10