FDMS2508SDC Fairchild Semiconductor, FDMS2508SDC Datasheet - Page 4

• Manufacturer Part Number: FDMS2508SDC
• Description: MOSFET N-CH 25V DUAL POWER56
• Manufacturer: Fairchild Semiconductor
• Series: Dual Cool™, PowerTrench®, SyncFET™r

Specifications of FDMS2508SDC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.95 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 69nC @ 10V
• Input Capacitance (ciss) @ Vds: 4515pF @ 13V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.95 mOhms
• Forward Transconductance Gfs (max / Min): 170 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 49 A
• Power Dissipation: 78 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS2508SDCTR

©2010 Fairchild Semiconductor Corporation
FDMS2508SDC Rev.C
Typical Characteristics
180
135
180
135
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
90
45
90
45
Figure 3. Normalized On Resistance
0
0
Figure 1.
-75
1.0
Figure 5. Transfer Characteristics
0
I
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
D
V
GS
DS
-50
= 28 A
vs Junction Temperature
= 10 V
= 5 V
V
1.5
GS
T
V
V
V
-25
1
J
GS
GS
= 3.5 V
DS
On Region Characteristics
,
JUNCTION TEMPERATURE (
V
, GATE TO SOURCE VOLTAGE (V)
,
= 4.5 V
GS
DRAIN TO SOURCE VOLTAGE (V)
2.0
= 10 V
0
T
J
2
= 125
25
μ
2.5
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
C
50
T
J
3
= 25 °C unless otherwise noted
T
J
3.0
75
= -55
T
J
= 25
o
100 125 150
V
C )
o
V
C
GS
GS
4
3.5
o
C
= 2.7 V
= 3 V
μ
s
4.0
5
4
0.01
200
100
0.1
10
1
8
6
4
2
0
8
6
4
2
0
0.0
Figure 2.
Figure 4.
2
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
Figure 6.
V
GS
V
GS
= 0 V
T
V
J
0.2
SD
= 2.7 V
= 125
, BODY DIODE FORWARD VOLTAGE (V)
V
Normalized On-Resistance
On-Resistance vs Gate to
GS
45
I
4
Source Voltage
D
o
,
Source to Drain Diode
,
C
GATE TO SOURCE VOLTAGE (V)
I
DRAIN CURRENT (A)
D
0.4
= 28 A
V
GS
T
J
= 3 V
= -55
T
0.6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
90
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
J
o
= 25
C
T
V
T
J
GS
J
= 125
= 25
o
= 3.5 V
C
0.8
V
GS
o
o
C
C
= 4.5 V
135
8
V
www.fairchildsemi.com
GS
1.0
= 10 V
μ
μ
s
s
1.2
180
10