FDMS2508SDC Fairchild Semiconductor, FDMS2508SDC Datasheet - Page 5

• Manufacturer Part Number: FDMS2508SDC
• Description: MOSFET N-CH 25V DUAL POWER56
• Manufacturer: Fairchild Semiconductor
• Series: Dual Cool™, PowerTrench®, SyncFET™r

Specifications of FDMS2508SDC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.95 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 69nC @ 10V
• Input Capacitance (ciss) @ Vds: 4515pF @ 13V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.95 mOhms
• Forward Transconductance Gfs (max / Min): 170 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 49 A
• Power Dissipation: 78 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS2508SDCTR

©2010 Fairchild Semiconductor Corporation
FDMS2508SDC Rev.C
Typical Characteristics
Figure 9.
0.01
500
100
0.1
50
10
10
10
Figure 7.
1
1
8
6
4
2
0
0.01
0.01
0
Unclamped Inductive Switching Capability
I
THIS AREA IS
LIMITED BY r DS
SINGLE PULSE
T
R
T
D
Figure 11.
J
A
θ
= 28A
JA
= MAX RATED
= 25
= 81
0.1
V
o
10
C
Gate Charge Characteristics
DS
0.1
o
t
C/W
V
AV
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
DD
T
, TIME IN AVALANCHE (ms)
Q
J
(
on
Forward Bias Safe
= 10 V
g
= 125
, GATE CHARGE (nC)
)
20
1
T
o
V
C
J
DD
1
= 25
= 13 V
T
o
T
C
J
10
J
30
= 100
= 25 °C unless otherwise noted
V
DD
10
o
C
= 16 V
100
40
10 ms
100 ms
1 ms
1 s
10 s
100 us
DC
100
1000
200
50
5
10000
5000
1000
1000
100
200
150
100
100
0.5
50
10
Figure 10. Maximum Continuous Drain
0
0.1
1
25
10
Figure 12.
-4
f = 1 MHz
V
Figure 8.
GS
Current vs Case Temperature
V
Limited by package
GS
= 0 V
10
= 4.5 V
V
-3
50
DS
Power Dissipation
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
T
V
C
t, PULSE WIDTH (sec)
10
Single Pulse Maximum
Capacitance vs Drain
GS
,
CASE TEMPERATURE (
-2
= 10 V
75
1
10
-1
100
1
SINGLE PULSE
R
T
R
10
o
A
θ
θ
C )
JA
JC
= 25
125
10
= 1.6
= 81
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C
C
C
o
100
rss
iss
oss
C
o
o
C/W
C/W
1000
30
150