IRFHM830DTR2PBF International Rectifier, IRFHM830DTR2PBF Datasheet - Page 2

• Manufacturer Part Number: IRFHM830DTR2PBF
• Description: MOSFET N-CH 30V 20A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFHM830DTR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 1797pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.1 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 37 W
• Gate Charge Qg: 13 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFHM830DTR2PBFTR

BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
Q
R
t
t
t
t
C
C
C
E
I
I
I
V
t
Q
t
R
R
R
R
Static @ T
Avalanche Characteristics
Diode Characteristics
Thermal Resistance
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
GS(th)
AS
SD
DS(on)
G
iss
oss
rss
θJC
θJC
θJA
θJA
g
g
Q
Q
Q
Q
sw
oss
rr
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
(<10s)
(Bottom)
(Top)
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C (unless otherwise specified)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Ù
Parameter
Parameter
gs2
™
+ Q
gd
)
g
g
Parameter
Time is dominated by parasitic Inductance
Min.
Min.
1.35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
30
69
1797
Typ.
0.02
Typ.
–––
-6.0
–––
–––
–––
–––
–––
363
148
–––
–––
–––
3.4
5.7
1.8
2.9
1.8
4.5
3.8
6.3
1.1
9.8
9.1
6.7
27
13
10
20
16
17
Max. Units
Max. Units
-100
Typ.
40
2.35
0.85
–––
500
–––
–––
–––
–––
––– mV/°C V
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
160
4.3
7.1
20
24
26
5
h
V/°C
mΩ
mA
µA
nA
nC
nC
nC
pF
nC
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
See Fig.17 & 18
V
V
I
R
See Fig.15
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 300A/µs
Typ.
–––
–––
–––
–––
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DS
GS
DS
DD
G
GS
DS
= 20A
= 20A
= 25°C, I
= 25°C, I
=1.8Ω
= V
= V
= 24V, V
= 24V, V
= 15V, I
= 15V
= 16V, V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 10V, V
= 4.5V
= 15V, V
= 0V
GS
GS
Max.
82
20
, I
, I
D
D
D
S
F
D
D
= 1mA
Conditions
D
Conditions
GS
GS
DS
GS
GS
= 20A, V
= 20A, V
= 50µA
= 1mA
= 20A
= 20A
= 20A
Max.
= 0V
= 0V, T
= 15V, I
= 0V
= 4.5V
eÃ
3.4
37
46
31
D
e
e
DD
GS
= 4mA
www.irf.com
J
D
= 125°C
G
= 15V
= 0V
= 20A
Units
mJ
A
Units
°C/W
e
D
S