IRFHM830DTR2PBF International Rectifier, IRFHM830DTR2PBF Datasheet - Page 4

• Manufacturer Part Number: IRFHM830DTR2PBF
• Description: MOSFET N-CH 30V 20A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFHM830DTR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 1797pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.1 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 37 W
• Gate Charge Qg: 13 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFHM830DTR2PBFTR

Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000
100
1.0
10
Fig 9. Maximum Drain Current Vs.
75
50
25
0.001
0
0.01
0.2
0.1
10
25
Case (Bottom) Temperature
1E-006
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
V SD , Source-to-Drain Voltage (V)
T J = 150°C
0.4
50
T C , Case Temperature (°C)
D = 0.50
SINGLE PULSE
( THERMAL RESPONSE )
0.20
0.10
0.01
0.05
0.02
0.6
75
1E-005
Limited By Package
0.8
100
T J = 25°C
V GS = 0V
1.0
125
0.0001
t 1 , Rectangular Pulse Duration (sec)
1.2
150
0.001
1000
Fig 10. Threshold Voltage Vs. Temperature
100
0.1
3.0
2.5
2.0
1.5
1.0
0.5
10
1
0.10
0.01
-75 -50 -25
Fig 8. Maximum Safe Operating Area
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 1.0A
ID = 10mA
ID = 5.0mA
ID = 2.0mA
ID = 1.0mA
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
V DS , Drain-to-Source Voltage (V)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
T J , Temperature ( °C )
0
1
0.1
25
10msec
50
100µsec
10
75 100 125 150
1msec
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1
100