STP60N3LH5 STMicroelectronics, STP60N3LH5 Datasheet - Page 10

• Manufacturer Part Number: STP60N3LH5
• Description: MOSFET N-CH 30V 48A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP60N3LH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.4 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 8.8nC @ 5V
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0114 Ohms
• Forward Transconductance Gfs (max / Min): 1.1 V
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 48 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Gate Charge Qg: 8.8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10713-5

Package mechanical data
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Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK
Doc ID 14079 Rev 3
STD60N3LH5, STP60N3LH5, STU60N3LH5
®