STP60N3LH5 STMicroelectronics, STP60N3LH5 Datasheet - Page 8

• Manufacturer Part Number: STP60N3LH5
• Description: MOSFET N-CH 30V 48A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP60N3LH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.4 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 8.8nC @ 5V
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0114 Ohms
• Forward Transconductance Gfs (max / Min): 1.1 V
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 48 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Gate Charge Qg: 8.8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10713-5

Test circuits
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Figure 13. Switching times test circuit for
Figure 15. Test circuit for inductive load
Figure 17. Unclamped inductive waveform
Test circuits
resistive load
switching and diode recovery times
Doc ID 14079 Rev 3
Figure 14. Gate charge test circuit
Figure 16. Unclamped inductive load test
Figure 18. Switching time waveform
STD60N3LH5, STP60N3LH5, STU60N3LH5
circuit