STP60N3LH5 STMicroelectronics, STP60N3LH5 Datasheet - Page 8
![MOSFET N-CH 30V 48A TO-220](/photos/29/5/290504/to-220_sml.jpg)
STP60N3LH5
Manufacturer Part Number
STP60N3LH5
Description
MOSFET N-CH 30V 48A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Specifications of STP60N3LH5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.4 mOhm @ 24A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
8.8nC @ 5V
Input Capacitance (ciss) @ Vds
1350pF @ 25V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0114 Ohms
Forward Transconductance Gfs (max / Min)
1.1 V
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
48 A
Power Dissipation
60 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Gate Charge Qg
8.8 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10713-5
Available stocks
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Quantity
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Test circuits
3
8/16
Figure 13. Switching times test circuit for
Figure 15. Test circuit for inductive load
Figure 17. Unclamped inductive waveform
Test circuits
resistive load
switching and diode recovery times
Doc ID 14079 Rev 3
Figure 14. Gate charge test circuit
Figure 16. Unclamped inductive load test
Figure 18. Switching time waveform
STD60N3LH5, STP60N3LH5, STU60N3LH5
circuit