STD12NM50ND STMicroelectronics, STD12NM50ND Datasheet - Page 7

• Manufacturer Part Number: STD12NM50ND
• Description: MOSFET N-CH 500V 11A DPAK
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STD12NM50ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 50V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10020-2

STB12NM50ND, STD12NM50ND, STF12NM50ND
Figure 8.
Figure 10. Transconductance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
G
V
(S)
(V)
4.5
2.5
0.5
(A)
8.5
6.5
20
15
10
10
I
GS
FS
D
0
6
4
2
8
0
5
0
0
0
V
DS
Output characteristics
5
5
5
10
10
10
V
T
DD
15
V
I
J
15
D
=-50°C
GS
=400V
=11A
15
=10V
20
20
20
25
25
T
T
J
=150°C
J
=25°C
25
30
25
V
6V
7V
GS
5V
Q
Doc ID 14936 Rev 2
I
D
AM03987v1
AM03989v1
AM03991v1
g
(A)
V
(nC)
0
DS
50
200
150
100
400
350
300
250
(V)
Figure 9.
Figure 11. Static drain-source on resistance
R
1000
DS(on)
100
(pF)
0.35
0.33
0.25
0.31
0.29
0.27
(A)
(Ω)
20
15
10
10
I
C
D
0
5
1
0
0.1
0
Transfer characteristics
2
2
1
4
4
Electrical characteristics
10
6
6
8
8
100
V
DS
10
=20V
10
V
V
GS
DS
I
D
AM03990v1
(V)
AM03988v1
AM03992v1
(A)
(V)
Ciss
Coss
Crss
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