STD12NM50ND STMicroelectronics, STD12NM50ND Datasheet - Page 8

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STD12NM50ND

Manufacturer Part Number
STD12NM50ND
Description
MOSFET N-CH 500V 11A DPAK
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheet

Specifications of STD12NM50ND

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
850pF @ 50V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10020-2

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0
Electrical characteristics
8/16
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
(norm)
V
GS(th)
1.00
0.80
0.70
1.10
0.90
(V)
V
0.6
0.4
0.2
0.8
1.2
1.0
SD
-50
0
0
vs temperature
characteristics
-25
10
0
T
J
=-50°C
20
25
T
J
50
=25°C
30
75
40
100
T
J
=150°C
50
T
J
(°C)
I
SD
Doc ID 14936 Rev 2
AM03996v1
AM03993v1
(A)
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
STB12NM50ND, STD12NM50ND, STF12NM50ND
(norm)
R
(norm)
BV
DS(on)
0.99
0.95
1.01
0.97
0.93
1.07
1.05
1.03
1.1
0.9
0.7
DSS
1.7
1.5
1.3
0.5
2.0
1.9
-50
-50
temperature
-25
-25
0
0
25
25
50
VDSS
50
75
75
vs temperature
100
100
T
T
J
J
(°C)
(°C)
AM03394v1
AM03995v1

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