STP4N62K3 STMicroelectronics, STP4N62K3 Datasheet

MOSFET N-CH 620V 3.8A TO-220

STP4N62K3

Manufacturer Part Number
STP4N62K3
Description
MOSFET N-CH 620V 3.8A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH3™r
Datasheets

Specifications of STP4N62K3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.95 Ohm @ 1.9A, 10V
Drain To Source Voltage (vdss)
620V
Current - Continuous Drain (id) @ 25° C
3.8A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
450pF @ 50V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.95 Ohms
Drain-source Breakdown Voltage
620 V
Gate-source Breakdown Voltage
3 V
Continuous Drain Current
3.8 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
14 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10651-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP4N62K3
Manufacturer:
STMicroelectronics
Quantity:
800
Part Number:
STP4N62K3������
Manufacturer:
ST
0
Features
Application
Description
These devices are made using the
SuperMESH3™ Power MOSFET technology that
is obtained via improvements applied to
STMicroelectronics’ SuperMESH™ technology
combined with a new optimized vertical structure.
The resulting product has an extremely low on
resistance, superior dynamic performance and
high avalanche capability, making it especially
suitable for the most demanding applications.
Table 1.
May 2010
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
STB4N62K3
STP4N62K3
STF4N62K3
STI4N62K3
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitances
Improved diode reverse recovery
characteristics
Zener-protected
Switching applications
Type
N-channel 620 V, 1.8 Ω, 3.8 A SuperMESH3™ Power MOSFET
Order codes
STB4N62K3
STP4N62K3
STF4N62K3
STI4N62K3
Device summary
620 V
V
DSS
< 1.95 Ω
R
max
DS(on)
3.8 A
Marking
4N62K3
I
D
Doc ID 17548 Rev 1
70 W
25 W
70 W
70 W
Pw
D
STB4N62K3, STF4N62K3
2
STI4N62K3, STP4N62K3
Figure 1.
PAK, TO-220FP, I
TO-220FP
Package
TO-220
D²PAK
I²PAK
D²PAK
G(1)
I²PAK
Internal schematic diagram
1
1
1 2
3
3
3
D(2)
S(3)
2
PAK, TO-220
Tape and reel
TO-220FP
Packaging
TO-220
Tube
Tube
Tube
Preliminary data
1
1
2
2
www.st.com
3
3
AM01476v1
1/14
14

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STP4N62K3 Summary of contents

Page 1

... Table 1. Device summary Order codes STB4N62K3 STF4N62K3 STI4N62K3 STP4N62K3 May 2010 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. STB4N62K3, STF4N62K3 STI4N62K3, STP4N62K3 2 D PAK, TO-220FP D²PAK Figure 1 ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB/F/I/P4N62K3 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed) DM ...

Page 4

Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) C Table 4. On /off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate ...

Page 5

STB/F/I/P4N62K3 Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) ...

Page 6

Test circuits 3 Test circuits Figure 2. Switching times test circuit for resistive load D.U. Figure 4. Test circuit for inductive load switching and diode recovery times ...

Page 7

STB/F/I/P4N62K3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ...

Page 8

Package mechanical data Table 9. TO-220FP mechanical data Dim Dia Figure 8. TO-220FP drawing A 8/14 Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 ...

Page 9

STB/F/I/P4N62K3 TO-220 type A mechanical data Dim Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 ∅P 3.75 Q ...

Page 10

Package mechanical data Dim 10/14 D2PAK (TO-263) mechanical data m m ...

Page 11

STB/F/I/P4N62K3 Dim I²PAK (TO-262) mechanical data mm Min Typ Max 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 0.70 1.23 1.32 8.95 9.35 2.40 2.70 4.95 ...

Page 12

Package mechanical data 5 Package mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 ...

Page 13

STB/F/I/P4N62K3 6 Revision history Table 10. Document revision history Date 05-May-2010 Revision 1 First release Doc ID 17548 Rev 1 Revision history Changes 13/14 ...

Page 14

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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