STP85N3LH5 STMicroelectronics, STP85N3LH5 Datasheet - Page 4

• Manufacturer Part Number: STP85N3LH5
• Description: MOSFET N-CH 30V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP85N3LH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.4 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Input Capacitance (ciss) @ Vds: 1850pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0054 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 22 V
• Continuous Drain Current: 80 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 4.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8451-5

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
R
CASE
V
(BR)DSS
I
Q
Q
I
C
GS(th)
DS(on)
C
C
Q
Q
DSS
GSS
R
Q
oss
gs1
gs2
iss
rss
gs
gd
G
g
= 25 °C unless otherwise specified)
Drain-source breakdown
Voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Pre V
charge
Post V
charge
Gate input resistance
Static
Dynamic
DS
= 0)
th
th
gate-to-source
Parameter
Parameter
gate-to-source
GS
= 0)
Doc ID 13833 Rev 7
V
V
V
V
Figure 16
V
V
Figure 16
f = 1 MHz gate bias
Bias = 0 test signal
level = 20 mV
open drain
I
V
V
V
V
V
SMD version
V
V
SMD version
V
D
DS
GS
DD
GS
DD
GS
GS
GS
GS
GS
GS
DS
DS
DS
= 250 µA, V
= 25 V, f=1 MHz,
= 0
= 5 V
= 5 V
Test conditions
Test conditions
= 15 V, I
= 15 V, I
= 30 V
= 30 V,Tc = 125 °C
= ± 22 V
= V
= 10 V, I
= 10 V, I
= 5 V, I
= 5 V, I
GS
STD85N3LH5, STP85N3LH5, STU85N3LH5
, I
D
D
D
D
D
D
D
= 40 A
= 40 A
= 250 µA
GS
= 80 A
= 80 A
= 40 A
= 40 A
= 0
Min.
Min.
30
1
0.0046 0.0054
0.0052 0.0065
0.0058 0.0071
0.042
Typ.
1850
Typ.
380
1.8
6.8
4.7
2.3
4.5
1.2
58
14
0.005
Max.
Max.
±
2.5
100
10
1
Unit
Unit
nC
nC
nC
nC
nC
pF
pF
pF
µA
µA
nA
Ω
Ω
Ω
Ω
Ω
V
V