STP85N3LH5 STMicroelectronics, STP85N3LH5 Datasheet - Page 6

• Manufacturer Part Number: STP85N3LH5
• Description: MOSFET N-CH 30V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP85N3LH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.4 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Input Capacitance (ciss) @ Vds: 1850pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0054 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 22 V
• Continuous Drain Current: 80 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 4.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8451-5

Electrical characteristics
2.1
6/16
Figure 2.
Figure 4.
Figure 6.
Electrical characteristics (curves)
Safe operating area
Output characteristics
Normalized B
VDSS
vs temperature
Doc ID 13833 Rev 7
Figure 3.
Figure 5.
Figure 7.
STD85N3LH5, STP85N3LH5, STU85N3LH5
160
140
120
100
(A)
80
40
20
60
I
D
0
0
Thermal impedance
Transfer characteristics
Static drain-source on resistance
1
2
3
V
GS
(V)
AM03359v1