STL52N25M5 STMicroelectronics, STL52N25M5 Datasheet - Page 5

• Manufacturer Part Number: STL52N25M5
• Description: MOSFET N-CH 250V 28A POWERFLAT
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STL52N25M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 1770pF @ 50V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: PowerFlat™ (5x6)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 250 V
• Continuous Drain Current: 28 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10783-2

STL52N25M5
Table 6.
Table 7.
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Symbol
Symbol
I
V
SDM
t
I
I
t
t
SD
c(off)
RRM
RRM
I
d(V)
t
Q
Q
r(V)
SD
t
t
f(i)
rr
rr
rr
rr
(2)
(1)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 17819 Rev 1
V
R
(see
(see
I
I
V
(see
I
V
(see
SD
SD
SD
DD
G
DD
DD
= 4.7 Ω, V
= 28 A, V
= 28 A, di/dt = 100 A/µs
= 28 A, di/dt = 100 A/µs
= 125 V, I
= 60 V, T
= 60 V T
Figure
Figure
Figure
Figure
Test conditions
Test conditions
13)
18)
15)
15)
J
GS
GS
J
D
= 150 °C
= 25 °C
= 14 A,
= 0
= 10 V
Electrical characteristics
Min.
Min. Typ. Max Unit
-
-
-
-
-
Typ.
14.5
40
18
64
82
168
196
1.2
1.7
17
Max Unit
112
1.6
28
-
µC
µC
ns
ns
ns
ns
ns
ns
5/12
A
A
V
A
A