STL52N25M5 STMicroelectronics, STL52N25M5 Datasheet - Page 8

• Manufacturer Part Number: STL52N25M5
• Description: MOSFET N-CH 250V 28A POWERFLAT
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STL52N25M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 1770pF @ 50V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: PowerFlat™ (5x6)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 250 V
• Continuous Drain Current: 28 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10783-2

Test circuits
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8/12
Figure 13. Switching times test circuit for
Figure 15. Test circuit for inductive load
Figure 17. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
resistive load
switching and diode recovery times
Test circuits
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100µH
V
2200
µF
(BR)DSS
3.3
µF
3.3
µF
1000
Doc ID 17819 Rev 1
µF
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 14. Gate charge test circuit
Figure 16. Unclamped inductive load test
Figure 18. Switching time waveform
V
P
Vgs
Vds
Id
i
V
W
i
=20V=V
10%Vds
90%Vds
90%Vgs
P
w
on
on
2200
µF
1kΩ
GMAX
Vgs(I(t))
circuit
I
V
D
))
D
I
G
2.7kΩ
12V
=CONST
t
d
(v)
47kΩ
L
t
r
(v)
D.U.T.
t
c
(off)
47kΩ
100Ω
t
f
(i)
2200
µF
100nF
Inductive Load Turn - off
STL52N25M5
3.3
µF
D.U.T.
AM01469v1
AM01471v1
AM05540v1
10%Id
1kΩ
90%Id
V
V
V
G
DD
DD